TSV-Core Helical Inductors for High Inductance in Small Footprints

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Solution Overview

Problem

The challenge in miniaturizing inductors for semiconductor devices is that traditional inductors are bulky, and existing approaches such as active inductors and spiral inductors either consume excessive power or occupy large surface areas, making them cost- and size-prohibitive for high inductance applications.

Innovation Solution

The use of semiconductor devices with through-substrate via cores and substantially helical conductors that extend into the substrate, creating a magnetic field with a high-aspect-ratio TSV and coaxial laminate layers to reduce eddy current losses and increase inductance while minimizing area occupancy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If traditional discrete inductors are used, then high inductance is achieved, but the device occupies large area and increases in size

Engineering Contradiction:
Improveinductor areaVSAvoidinductance performance
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent transitions from planar spiral inductors to three-dimensional inductors utilizing vertical TSV structures. The helical conductor winds around the vertical TSV core, creating a 3D magnetic path that achieves high inductance in a compact footprint by exploiting the vertical dimension rather than expanding horizontally.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The inductor employs a composite structure combining conductive TSV material (e.g., copper, tungsten) with magnetic material layers (e.g., nickel, cobalt, ferrite) deposited on the TSV surface. This composite configuration enhances magnetic flux confinement and increases effective inductance while maintaining small area occupancy.

Inventive Principle:
Principle #40Composite materials

2Area of stationary object

If active inductors are used to achieve high inductance, then inductance value increases, but power consumption increases

Engineering Contradiction:
Improveinductor areaVSAvoidpower consumption
Core Design Contradiction:
Area of stationary objectVSUse of energy by moving object

Solution Approach 1:

The patent replaces active electronic circuits (operational amplifiers, transistors) with a passive electromagnetic structure. The TSV-based inductor achieves high inductance through physical magnetic field generation from current flow, eliminating the need for active components that consume DC bias power, thereby achieving zero static power consumption.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Reliability

If spiral inductors are used to achieve high inductance, then inductance value increases, but surface area occupancy increases

Engineering Contradiction:
Improveinductance valueVSAvoidsurface area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent transitions from planar spiral inductors to three-dimensional inductors utilizing vertical TSV structures. The helical conductor winds around the vertical TSV core, creating a 3D magnetic path that achieves high inductance in a compact footprint by exploiting the vertical dimension rather than expanding horizontally.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Area of stationary object

If miniaturization is pursued to reduce area, then area occupancy decreases, but inductance value decreases

Engineering Contradiction:
Improvearea occupancyVSAvoidinductance value
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent transitions from planar spiral inductors to three-dimensional inductors utilizing vertical TSV structures. The helical conductor winds around the vertical TSV core, creating a 3D magnetic path that achieves high inductance in a compact footprint by exploiting the vertical dimension rather than expanding horizontally.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The inductor employs a composite structure combining conductive TSV material (e.g., copper, tungsten) with magnetic material layers (e.g., nickel, cobalt, ferrite) deposited on the TSV surface. This composite configuration enhances magnetic flux confinement and increases effective inductance while maintaining small area occupancy.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables the creation of high-inductance inductors that occupy a small area, reducing power consumption and fabrication costs, while maintaining efficient magnetic field induction and signal/power coupling capabilities.

Implementation Method 1

a substantially helical conductor disposed around the TSV. The substantially helical conductor is configured to induce a magnetic field in the TSV in response to a current passing through the substantially helical conductor

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 2

creating a magnetic field with a high-aspect-ratio TSV and coaxial laminate layers to reduce eddy current losses and increase inductance

Methodology Applied
Scientific EffectMagnetic field confinement: Magnetic Field

Data Source

PatentUS20240234324A1Inductors with through-substrate via cores
Publication Date: 2024.07.11 MICRON TECHNOLOGY INC
  • US20240234324A1 patent drawing
  • US20240234324A1 patent drawing
  • US20240234324A1 patent drawing

AI summary

A semiconductor device comprising a substrate is provided. The device further comprises a through-substrate via (TSV) extending into the substrate, and a substantially helical conductor disposed around the TSV. The substantially helical conductor can be configured to generate a magnetic field in the TSV in response to a current passing through the helical conductor. More than one TSV can be included, and/or more than one substantially helical conductor can be provided.