TSV Crack Detection via Test Structure Voltage Measurement
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Solution Overview
Problem
In three-dimensional integrated circuit fabrication, thermal expansion differences between conductive materials in through-silicon vias (TSVs) and the silicon substrate can cause cracks, affecting chip performance, and existing methods lack effective detection and adjustment mechanisms for these cracks.
Innovation Solution
A through-silicon via crack detecting apparatus and method that uses a test TSV with conductive and dielectric liners, and contacts to determine crack presence by measuring voltage differences, allowing for adjustment of process parameters for adjacent TSVs to prevent crack propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If thermal cycles are applied in the downstream process of three-dimensional chip fabrication, then the conductive material in TSV undergoes thermal expansion, but this causes cracks in the surrounding die material due to coefficient of thermal expansion mismatch
Solution Approach 1:
The patent introduces a test TSV structure with conductive and dielectric liners before actual production TSVs are processed. This preliminary test structure allows detection of crack-prone locations in advance, enabling preventive measures to be taken before thermal cycling causes damage to the actual chip structures.
Solution Approach 2:
The patent uses a test TSV as an intermediary structure that mimics the thermal expansion behavior of production TSVs but is positioned to detect cracks in surrounding die material. The test TSV acts as a sensor that translates mechanical stress from thermal cycling into detectable electrical signals, allowing indirect monitoring of die integrity.
2Productivity
If existing fabrication processes are used without crack detection, then production is simpler and faster, but cracks may propagate to other circuit units affecting chip performance
Solution Approach 1:
The test TSV structure is fabricated in advance during the manufacturing process, allowing crack detection to occur before final chip assembly and testing. This preliminary detection capability enables early identification of defective areas without delaying the overall production schedule or requiring additional post-processing steps.
Solution Approach 2:
The test TSV structure automatically detects cracks through its own electrical properties. When cracks occur in the surrounding die material, they affect the electrical continuity of the test TSV, which can be detected by simple electrical measurements. This self-detecting mechanism eliminates the need for complex external inspection equipment or additional testing steps.
3Measurement precision
If a test TSV with conductive liner and dielectric liner is used for detection, then crack detection accuracy is improved, but the device complexity increases
Solution Approach 1:
The test TSV structure serves multiple functions: it acts as both a structural element similar to production TSVs and a detection sensor. The same test TSV structure that is fabricated alongside production TSVs also functions as the detection mechanism, eliminating the need for separate dedicated sensing structures or complex detection apparatus.
Solution Approach 2:
The patent utilizes changes in electrical parameters (conductivity, resistance) of the test TSV to detect cracks. By monitoring electrical property changes in the test TSV, the system can accurately detect cracks in surrounding die material with simple electrical measurements rather than requiring complex imaging or mechanical inspection equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables accurate detection of TSV cracks and improves the yield of TSVs by allowing for parameter adjustments, thereby enhancing the reliability and performance of three-dimensional integrated circuits.
Implementation Method 1
Since the coefficient of thermal expansion of the conductive material (e.g., copper) in the TSV is different from the coefficient of thermal expansion of the material (e.g., silicon) of surrounding dies, the conductive material in the TSV may cause cracks in the material of surrounding dies due to thermal expansion
Implementation Method 2
measuring a voltage difference between the first contact and the second contact; and determining that the test TSV has a crack if the first contact is detected to be in conduction with the second contact
Data Source
AI summary
The present disclosure relates to a through-silicon via (TSV) crack detecting apparatus, a detecting method, and a fabricating method of the semiconductor device. The TSV crack detecting apparatus includes a test TSV, a conductive liner, a second dielectric liner, a first contact, and a second contact. The test TSV is disposed within a semiconductor substrate, including a conductive channel and a first dielectric liner for isolating the conductive channel and the semiconductor substrate. The conductive liner surrounds the first dielectric liner. The second dielectric liner surrounds the conductive liner. The first contact is connected to the conductive channel. The second contact is connected to the conductive liner. A voltage difference between the first contact and the second contact is used to determine whether a TSV within a predetermined range to the test TSV has a crack based on a conductive state between the first contact and the second contact.