TSV Structure with Decoupling Capacitor for Noise Reduction
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Solution Overview
Problem
The integration of through-silicon via (TSV) structures in 3D and 2.5D packages faces challenges due to Cu diffusion phenomena, leading to reliability issues and switching noise, necessitating a solution that prevents metal ion diffusion and enhances the stability and integration of decoupling capacitors.
Innovation Solution
An integrated circuit device with a TSV structure incorporating a conductive plug, a conductive barrier layer, and an insulating thin film, along with a decoupling capacitor design featuring electrodes and insulating films, is proposed. The decoupling capacitor is connected to the TSV structure via an isopotential conductive layer, minimizing metal ion diffusion and providing a stable operating characteristic.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a Cu contact plug is used in the TSV structure, then electrical conductivity is improved, but metal ion diffusion into the semiconductor substrate occurs causing reliability issues
Solution Approach 1:
A barrier layer is introduced as an intermediary between the Cu contact plug and the semiconductor substrate. This barrier layer prevents direct contact and diffusion of Cu ions into the substrate while maintaining electrical conductivity through the TSV structure.
Solution Approach 2:
The harmful diffusion barrier function is extracted from the Cu plug itself and implemented as a separate barrier layer structure, allowing the Cu plug to focus on providing electrical conductivity while the barrier layer handles the protection function.
2Reliability
If decoupling capacitors are integrated in the semiconductor substrate, then switching noise is reduced, but device complexity increases
Solution Approach 1:
The decoupling capacitor structure is merged with the existing TSV structure by forming capacitor electrodes within the same via holes and using shared insulating layers, thereby reducing overall device complexity while achieving noise reduction.
Solution Approach 2:
The via holes and insulating layers are designed to serve dual functions: as TSV structures for electrical connection and as decoupling capacitor structures for noise filtering, thereby reducing the need for separate components.
3Reliability
If multiple layers are added to the TSV structure to prevent diffusion, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The barrier layer is formed preliminarily before filling the via hole with Cu, establishing the diffusion prevention structure in advance. This preliminary action simplifies subsequent manufacturing steps by preventing contamination during the Cu filling process.
Solution Approach 2:
The barrier layer thickness and material composition are optimized to provide adequate diffusion protection while maintaining compatibility with existing manufacturing processes and parameters, thereby minimizing the impact on ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces metal ion diffusion, enhances reliability, and improves the integration and stability of TSV structures by acting as a filter for irregular circuit signal changes, thereby improving the performance and reliability of 3D and 2.5D packages.
Implementation Method 1
a first insulating thin film disposed between the conductive plug and the first conductive barrier layer
Implementation Method 2
a decoupling capacitor formed in the semiconductor substrate and connected to the TSV structure
Data Source
AI summary
An integrated circuit device is provided which includes a through-silicon via (TSV) structure and one or more decoupling capacitors, along with a method of manufacturing the same. The integrated circuit device may include a semiconductor structure including a semiconductor substrate, a TSV structure passing through the semiconductor substrate, and a decoupling capacitor formed in the semiconductor substrate and connected to the TSV structure. The TSV structure and the one or more decoupling capacitors may be substantially simultaneously formed. A plurality of decoupling capacitors may be disposed within a keep out zone (KOZ) of the TSV structure. The plurality of decoupling capacitors may have the same or different widths and/or depths. An isopotential conductive layer may be formed to reduce or eliminate a potential difference between different parts of the TSV structure.