TSV Detection Circuit Using Adjustable Resistor Voltage Division

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The TSV production process is not mature enough, leading to incomplete copper filling with voids, which reduces conductivity and can result in open circuits, affecting the yield of semiconductor devices.

Innovation Solution

A circuit and method for TSV detection using a voltage division circuit with an equivalent adjustable resistor and a reverse output circuit to determine whether a TSV is defective by comparing the voltage at the TSV's terminal with a preset value.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the electroplating process is used to fill copper in TSV, then the TSV structure can be formed for three-dimensional interconnection, but the copper filling may have voids leading to open circuits

Engineering Contradiction:
ImproveTSV conductivityVSAvoidcopper filling completeness
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by performing TSV detection before final packaging and testing. The detection circuit is integrated into the wafer-level test structure, allowing void detection to occur early in the manufacturing process, before defective devices are packaged and shipped. This enables early identification and removal of defective TSVs that would otherwise cause field failures.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses an intermediary detection circuit as a mediator between the TSV structure and the testing system. The detection circuit includes test signal input terminals, output terminals, and processing circuitry that interfaces with the TSV under test. This intermediary structure enables indirect measurement of TSV conductivity through voltage division ratios, allowing detection of voids without directly observing the copper filling.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If traditional testing methods are used, then manufacturing process can be maintained, but defective TSVs cannot be detected early, affecting overall yield

Engineering Contradiction:
Improvesemiconductor device yieldVSAvoidTSV defect detection capability
Core Design Contradiction:
ProductivityVSDifficulty of detecting and measuring

Solution Approach 1:

The patent applies segmentation by dividing the wafer into multiple independent test structures, each with its own detection circuit. The wafer contains a plurality of test structures arranged in arrays, with each structure having dedicated input and output terminals. This segmentation allows parallel testing of multiple TSVs simultaneously, significantly improving throughput and yield measurement efficiency.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent replaces mechanical/physical inspection methods with electrical measurement. Instead of using microscopy or other physical methods to detect voids, the system uses electrical conductivity measurements through voltage division ratios. The detection circuit measures voltage at different nodes and calculates the ratio to determine TSV health, substituting complex physical inspection with simpler electrical testing.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Accurately detects defective TSVs by determining the resistance value of the TSV's equivalent resistor relative to the adjustable resistor, effectively identifying open-circuited TSVs and improving semiconductor device yield.

Implementation Method 1

The equivalent adjustable resistor is used for voltage division

Methodology Applied
Scientific EffectVoltage division: Ohm's Law

Data Source

PatentUS12228619B2Through silicon via detection circuit and method
Publication Date: 2025.02.18 CHANGXIN MEMORY TECH INC
  • US12228619B2 patent drawing
  • US12228619B2 patent drawing
  • US12228619B2 patent drawing

AI summary

A circuit for through silicon via (TSV) detection includes a TSV to be tested, an equivalent adjustable resistor and a reverse output circuit. A first terminal of the TSV to be tested is connected to a second terminal of the equivalent adjustable resistor, and a second terminal of the TSV to be tested is grounded. An input terminal of the reverse output circuit is connected to the first terminal of the TSV to be tested. The method includes: adjusting a resistance value of the equivalent adjustable resistor to a preset first resistance value, and keeping a voltage of a first terminal of the equivalent adjustable resistor at a preset voltage value, the first resistance value is a maximum resistance value of an equivalent resistor corresponding to the TSV to be tested when the TSV to be tested is normal.