TSV Dielectric Shielding for Low-Aspect-Ratio Advanced Packaging
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Solution Overview
Problem
The challenge in advanced semiconductor packaging is the formation of thin and suboptimal dielectric shielding layers in through-vias due to limitations in depositing dielectric materials, leading to increased leakage current and reduced performance.
Innovation Solution
A method involving trench formation, dielectric material lamination, and selective grinding or polishing to create high-thickness dielectric shielding layers within low aspect ratio through-vias, ensuring effective dielectric and conductive material exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dielectric material is deposited within vias by CVD or ALD, then dielectric shielding layers are formed, but the thickness is reduced due to deposition limitations
Solution Approach 1:
The patent applies preliminary action by forming the dielectric shielding layer on the outer surface of the via structure before the via filling process. This allows the dielectric material to be deposited as a thick layer using conventional CVD or ALD processes without the geometric constraints that would limit deposition within the via itself. The dielectric layer is formed on accessible surfaces where deposition tools can effectively deliver material, avoiding the thickness limitations imposed by via aspect ratios.
Solution Approach 2:
The patent transitions from attempting to deposit dielectric material within the via (one-dimensional constraint) to depositing dielectric material on the outer surface of the via structure (two-dimensional surface). This dimensional shift allows the dielectric shielding layer to achieve greater thickness while remaining accessible to deposition equipment, effectively bypassing the via dimension constraints that limit conventional within-via deposition approaches.
2Productivity
If via dimensions are decreased to increase circuit density, then interconnect density improves, but dielectric shielding layer thickness is reduced
Solution Approach 1:
By performing dielectric layer formation as a preliminary step before via filling, the patent enables thick dielectric shielding layers to be created on smaller-diameter vias. The dielectric material is deposited on the external surfaces where the via structure is accessible, allowing sufficient shielding thickness to be achieved even when via dimensions are reduced for higher circuit density.
Solution Approach 2:
The patent applies local quality by providing different dielectric layer configurations to different regions of the interconnect structure. Thick dielectric shielding is applied to external surfaces where space is available, while the via interior maintains its standard dimensions for high density. This localized approach allows optimal shielding thickness in regions where it matters most without compromising overall circuit density.
3Ease of operation
If dielectric shielding layer thickness is reduced, then via aspect ratio decreases, but leakage current increases
Solution Approach 1:
The patent uses preliminary action to form the dielectric shielding layer on external surfaces before via filling, enabling sufficient shielding thickness to be achieved without increasing the via aspect ratio. This timing allows the dielectric material to be deposited where it can provide effective leakage current blocking while maintaining the via dimensions needed for low aspect ratio and ease of operation.
Solution Approach 2:
The dielectric shielding layer acts as an intermediary element that provides electrical isolation and leakage current prevention between the conductive via structures. By positioning this dielectric layer on the external surfaces where it can achieve adequate thickness, the patent creates an effective barrier against leakage current while the via itself maintains its low aspect ratio for operational ease.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-thickness dielectric shielding layers, maintaining low aspect ratios, resulting in improved performance, reduced leakage current, and enhanced bandwidth in semiconductor packages.
Implementation Method 1
laminating a dielectric film on the first side of the silicon substrate to cause a dielectric material of the dielectric film to fill the trench
Implementation Method 2
plating a conductive material on the inner surface of the dielectric material
Implementation Method 3
grinding or polishing the silicon substrate on the first side and a second side opposite the first side
Implementation Method 4
grinding or polishing the silicon substrate on the first side and a second side opposite the first side
Data Source
AI summary
The present disclosure relates to through-via structures with dielectric shielding of interconnections for advanced wafer level semiconductor packaging. The methods described herein enable the formation of high thickness dielectric shielding layers within low aspect ratio through-via structures, thus facilitating thin and small-form-factor package structures having high I/O density with improved bandwidth and power.