TSV Structure with Dual Through-Electrode Units
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Solution Overview
Problem
In three-dimensional semiconductor packaging, through-silicon via (TSV) structures face challenges due to differences in thermal expansion coefficients between the TSV and the semiconductor substrate, leading to potential extrusion and instability, particularly when forming TSVs with varying impurity concentrations and grain sizes.
Innovation Solution
The implementation of a dual through-electrode unit structure within the TSV, where the first through-electrode unit has a lower impurity concentration and larger grain size, and the second through-electrode unit has a higher impurity concentration and smaller grain size, is used. This structure is formed using electroplating processes with varying current densities and includes impurities like carbon, oxygen, and nitrogen, and aromatic functional groups to manage thermal stress and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through-silicon-via structure is formed with uniform impurity concentration and grain size, then the manufacturing process is simple, but thermal stress management is poor leading to extrusion and instability
Solution Approach 1:
The through-silicon-via structure is divided into two distinct through-electrode units: a first through-electrode unit with lower impurity concentration and larger grain size, and a second through-electrode unit with higher impurity concentration and smaller grain size. This segmentation allows each unit to serve different functional purposes in managing thermal stress and maintaining structural stability.
Solution Approach 2:
Different regions of the TSV structure are assigned different material properties. The first through-electrode unit has properties optimized for one aspect of thermal management while the second unit has properties optimized for another aspect, creating local quality variations that collectively solve the overall thermal stress problem.
2Ease of manufacture
If the TSV structure uses a single electrode unit with uniform properties, then the structure is simple to manufacture, but it experiences thermal expansion mismatch and extrusion
Solution Approach 1:
The impurity concentration and grain size parameters are deliberately varied between the two through-electrode units. The first unit has lower impurity concentration and larger grain size, while the second unit has higher impurity concentration and smaller grain size. These parameter changes create different thermal and mechanical properties in each unit, enabling better management of thermal expansion mismatch.
Solution Approach 2:
The TSV structure employs a composite configuration of two through-electrode units with different material properties. This composite structure combines the advantages of both low-impurity/large-grain and high-impurity/small-grain regions to achieve superior thermal expansion stability compared to a uniform single-unit structure.
3Strength
If impurity concentration is increased to improve adhesion, then adhesion strength improves, but grain size decreases and structural stability is compromised
Solution Approach 1:
The structure is segmented into two electrode units with different impurity concentrations. The second through-electrode unit has higher impurity concentration to provide strong adhesion, while the first through-electrode unit has lower impurity concentration and larger grain size to maintain structural stability. This segmentation allows both requirements to be satisfied simultaneously in different regions.
Solution Approach 2:
Different regions are assigned different impurity concentrations based on their specific functional requirements. The region requiring strong adhesion (second unit) has higher impurity concentration, while the region requiring structural stability (first unit) has lower impurity concentration and larger grain size, creating local quality optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces local extrusion and enhances the reliability of the TSV structure by effectively managing thermal stress through the dual impurity and grain size configuration, improving the structural stability and reliability of the TSVs.
Implementation Method 1
This structure is formed using electroplating processes with varying current densities
Data Source
AI summary
An integrated circuit device including a through-silicon-via (TSV) structure and methods of manufacturing the same are provided. The integrated circuit device may include the TSV structure penetrating through a semiconductor structure. The TSV structure may include a first through electrode unit including impurities of a first concentration and a second through electrode unit including impurities of a second concentration greater than the first concentration.