TSV-Enabled SOI Structure Without Wafer Bonding

The patent replaces the expensive traditional SOI bonding process with a cost-effective alternative using disposable-like sacrificial layers (oxide layer and metal layer) that are deposited, patterned, and removed to create the desired SOI structure. This approach sacrifices the reusability and precision of bonding equipment in exchange for significantly reduced fabrication costs while maintaining the performance benefits of SOI substrates

The patent changes the fundamental manufacturing parameters from thermal bonding processes to deposition and etching processes. By using atomic layer deposition (ALD) to create sacrificial oxide and metal layers, then selectively removing them to form the SOI structure, the method transforms the manufacturing approach from high-cost bonding to lower-cost deposition-based processes, achieving both cost reduction and performance maintenance

The patent performs preliminary actions by forming the TSV openings and isolation structures in the metal substrate layer before completing the semiconductor device fabrication. The isolation structures are deposited and patterned early in the process to define TSV locations, and the openings are created while the sacrificial layers are still in place, simplifying subsequent via formation and reducing overall manufacturing complexity

The patent uses the sacrificial oxide and metal layers as intermediary structures that facilitate TSV formation. These intermediary layers are deposited, patterned, and removed to create the TSV openings and isolation structures, serving as temporary mediators that simplify the overall TSV formation process and reduce the complexity of direct via drilling through the metal substrate