TSV Enclosure Structure for Dielectric Delamination Control
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Solution Overview
Problem
The fabrication of through-silicon vias (TSVs) in integrated circuits faces challenges such as delamination and damage to dielectric materials during etching and deposition processes, as well as unwanted diffusion of conductive materials, which affect manufacturability and reliability.
Innovation Solution
The implementation of an enclosure structure around TSVs within the multilayer interconnect (MLI) to protect dielectric materials and prevent conductive material diffusion, using a protective barrier layer between the TSV sidewalls and the enclosure structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If TSVs are fabricated in integrated circuits, then electrical interconnections are provided, but delamination and damage to dielectric materials occur during etching and deposition processes
Solution Approach 1:
An enclosure structure is introduced as an intermediary element between the TSV and the dielectric materials. This enclosure structure acts as a protective barrier that prevents direct interaction between the TSV fabrication processes (etching and deposition) and the surrounding dielectric materials, thereby preventing delamination and damage while still allowing the TSV to provide electrical interconnections.
Solution Approach 2:
The enclosure structure is formed around the TSV before the etching and deposition processes are completed. This preliminary formation of the protective enclosure ensures that the dielectric materials are protected from harmful effects during the remaining fabrication steps, preventing delamination and damage before they can occur.
2Reliability
If TSVs are fabricated in integrated circuits, then electrical interconnections are provided, but unwanted diffusion of conductive materials occurs
Solution Approach 1:
The enclosure structure serves as a mediator that physically separates the conductive materials within the TSV from the surrounding dielectric materials. This separation prevents the unwanted diffusion of conductive materials into the dielectric, maintaining material purity and device reliability while preserving the electrical interconnection function.
Solution Approach 2:
The enclosure structure provides localized protection around the TSV, creating a distinct region with different material properties. Within this enclosed region, conductive materials are contained and prevented from diffusing into the surrounding dielectric materials, while the rest of the dielectric structure maintains its original properties and functions.
3Reliability
If enclosure structure is implemented around TSVs, then delamination and contamination are mitigated, but device complexity increases
Solution Approach 1:
The enclosure structure is merged with the existing multilayer interconnect structure, sharing the same fabrication processes and material layers where possible. This integration approach minimizes the additional complexity by combining the protective enclosure function with the existing interconnect architecture rather than adding completely separate structures.
Solution Approach 2:
The enclosure structure serves multiple functions simultaneously: it provides mechanical protection against delamination, acts as a diffusion barrier for conductive materials, and maintains structural integrity of the MLI. This multi-functionality reduces the need for additional separate protective structures, thereby limiting the increase in device complexity.
Data Source
AI summary
Methods and devices of having an enclosure structure formed in a multi-layer interconnect and a through-silicon-via (TSV) extending through the enclosure structure. In some implementations, a protection layer is formed between the enclosure structure and the TSV.