TSV-Based ESD Protection Structure for Compact Chip Layouts
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Solution Overview
Problem
The challenge in semiconductor chip design is to reduce the circuit layout area required for electrostatic discharge (ESD) protection elements, particularly in stacked semiconductor chips using through-silicon vias (TSVs), as the number of TSVs can be large.
Innovation Solution
An electrostatic discharge protection structure and circuit that integrates a through-silicon via as the transistor gate, with heavily doped regions forming the source and drain, reducing the layout area by utilizing the substrate for ESD protection components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ESD protection elements are arranged for each TSV, then electrostatic discharge protection is improved, but circuit layout area increases
Solution Approach 1:
The patent merges the ESD protection function with the transistor structure by forming the transistor gate, source, and drain using the TSV and heavily doped regions. This integration allows a single structure to serve both as a functional transistor and an ESD protection element, eliminating the need for separate ESD protection circuits and reducing overall layout area.
Solution Approach 2:
The transistor structure is designed to perform multiple functions: it acts as both a switching element in the circuit and an ESD protection element. The TSV forms the gate while the heavily doped regions form source and drain, creating a structure that can handle normal circuit operation and electrostatic discharge events simultaneously.
2Adaptability or versatility
If the number of TSVs is increased, then chip connection capability is improved, but the number of ESD protection elements increases
Solution Approach 1:
Each TSV is merged with a transistor structure where the TSV forms the gate and heavily doped regions form source and drain. This combination means that every TSV automatically has integrated ESD protection capability, so increasing TSV count for better chip connection does not proportionally increase separate ESD protection elements.
Solution Approach 2:
The transistor structure serves itself as an ESD protection element. The same components (TSV as gate, heavily doped regions as source/drain) that constitute the functional transistor also provide the ESD protection function, eliminating the need for additional dedicated ESD protection structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively discharges electrostatic discharge current to voltage rails, minimizing circuit damage and lowering production costs by optimizing the layout area for ESD protection.
Implementation Method 1
The first heavily doped region is coupled to the through-silicon via through a transmission conductive wire, and the second heavily doped region is coupled to a second voltage rail through a second transmission conductive wire
Data Source
AI summary
An electrostatic discharge (ESD) protection structure and an ESD protection circuit are provided. The ESD protection structure includes a substrate, a though silicon via (TSV), a liner oxide layer, a first heavily doped region, and a second heavily doped region. The substrate is coupled to a first voltage rail. The TSV is formed in the substrate. The liner oxide layer surrounds a side surface of the TSV. The first heavily doped region is formed in the substrate and contacts a first side of the liner oxide layer. The second heavily doped region is formed in the substrate and contacts a second side of the liner oxide layer. The first heavily doped region is coupled to the TSV through a transmission conductive wire, and the second heavily doped region is coupled to a second voltage rail.