TSV ESD Protection Structure for 3D Semiconductor Packages

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Solution Overview

Problem

The generation and accumulation of electrostatic charges during the formation and operation of through substrate vias (TSVs) in 3D ICs can cause damage to devices and interconnects due to sudden discharge, necessitating a space-efficient electrostatic discharge (ESD) protection mechanism.

Innovation Solution

Incorporating an ESD protection structure in the semiconductor package, comprising a resistance coupled to a TSV and an ESD protection element grounded through metal lines, to safely discharge accumulated electrostatic charges during TSV formation and operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If TSV structures are formed to enable 3D IC integration, then integration density and bandwidth are improved, but electrostatic charge accumulation occurs causing damage to devices and interconnects

Engineering Contradiction:

Improveintegration densityVSAvoidelectrostatic discharge damage

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

An ESD protection structure is introduced as an intermediary element between the TSV and ground. This structure includes a resistance coupled to the TSV and an ESD protection element (such as a diode or transistor) that provides a controlled discharge path. The intermediary structure safely dissipates electrostatic charges before they can cause damage to sensitive devices and interconnects, while not interfering with the normal operation of the TSV.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The ESD protection structure is designed to activate before electrostatic discharge can cause damage. The protection element is configured to conduct or short to ground when voltage thresholds are exceeded, preemptively neutralizing harmful electrostatic charges. This preliminary protective action occurs automatically during TSV formation and operation, preventing damage before it occurs.

Inventive Principle:

Principle #10Preliminary action

2Reliability

If ESD protection structure is added to protect against electrostatic discharge, then device reliability is improved, but package area is consumed

Engineering Contradiction:

Improvedevice reliabilityVSAvoidpackage area

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

The ESD protection structure is implemented locally at the TSV location rather than as a distributed system. The protection elements (resistance and ESD protection element) are positioned in close proximity to the TSV, allowing effective protection with minimal area. This localized approach ensures that the protection function is provided exactly where electrostatic discharge poses the greatest risk, without consuming excessive package area.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The ESD protection structure is nested within the existing TSV architecture. The resistance and ESD protection element are integrated into the same vertical stack as the TSV, sharing the same footprint. This nesting allows the protection function to be added without significantly increasing the horizontal package area, as the protection elements are accommodated within the existing structural envelope.

Inventive Principle:

Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The ESD protection structure effectively reduces the likelihood of damage from electrostatic discharge by safely releasing accumulated charges, ensuring the integrity of the semiconductor devices and interconnects.

Implementation Method 1

The ESD protection structure effectively reduces the likelihood of damage from electrostatic discharge by safely releasing accumulated charges

Methodology Applied

Scientific EffectElectrostatic Discharge: Electrostatic Discharge

Implementation Method 2

an ESD protection structure in the semiconductor package, comprising a resistance coupled to a TSV and an ESD protection element grounded through metal lines, to safely discharge accumulated electrostatic charges

Methodology Applied

Scientific EffectJoule Heating: Joule Heating

Data Source

PatentUS20250324768A1Semiconductor packages and methods of manufacturing thereof

Publication Date: 2025.10.16 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor package is provided. The package includes a first die including a through via structure and an electrostatic discharge (ESD) protection structure, and a second die coupled to the first die. The ESD protection structure includes a resistance coupled in series between the through via structure and an ESD protection element. A terminal of the ESD protection element is coupled to a substrate of the first die.