TSV Fuse Structure for Complete Defective Die Power Cutoff
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Solution Overview
Problem
Conventional semiconductor fuse structures are located distally to through-silicon via (TSV) structures, leading to unnecessary power consumption when disconnecting a defective die, as current can still flow to interconnect structures and other device components.
Innovation Solution
A semiconductor die with a fuse structure positioned between the TSV and interconnect structure, featuring a resistance control layer and contact structure that concentrates current, allowing for localized heating and electrical disconnection by melting or vaporizing the resistance control layer to break the connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the fuse structure is located distally to the TSV structure, then the manufacturing process is simpler, but unnecessary power consumption occurs when disconnecting a defective die
Solution Approach 1:
The fuse structure is positioned as an intermediary element between the TSV structure and the interconnect structure, serving as a mediator that can interrupt current flow. This intermediate positioning allows the fuse to effectively block power delivery to defective dies while maintaining a manageable structural complexity through its integration into the existing TSV formation process
2Reliability
If the fuse structure is positioned between the TSV and interconnect structure, then complete electrical disconnection is achieved, but the device structure becomes more complex
Solution Approach 1:
The fuse structure is merged with the TSV structure by forming the fuse within the same trench and using the same conductive material deposition process. This combining approach achieves reliable electrical disconnection functionality while minimizing additional structural complexity, as the fuse shares the TSV's physical and process infrastructure
3Loss of energy
If conventional fuse structures are used distally to TSV, then device complexity is reduced, but energy wastage occurs in defective dies
Solution Approach 1:
The fuse structure serves as an intermediary control element positioned between the power delivery path (TSV) and the interconnect structure. This intermediate position enables precise control over power delivery to individual dies, allowing complete interruption of power to defective dies while maintaining power delivery to functional dies, thereby eliminating energy wastage without compromising operational ease
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents unnecessary power consumption by ensuring complete electrical disconnection of defective dies, reducing energy wastage and improving the efficiency of semiconductor packages.
Implementation Method 1
concentrates current, allowing for localized heating and electrical disconnection by melting or vaporizing the resistance control layer
Implementation Method 2
melting or vaporizing the resistance control layer to break the connection
Implementation Method 3
melting or vaporizing the resistance control layer to break the connection
Data Source
AI summary
A semiconductor die includes a first semiconductor substrate; a first interconnect structure disposed on a front side of the first semiconductor substrate; a first through-substrate via (TSV) structure extending through the first semiconductor substrate; and a first fuse structure disposed between and electrically connecting the TSV structure and the first interconnect structure.