TSV Guard Structure Layout for Smaller Keep-Out Zones

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Solution Overview

Problem

Semiconductor devices near through silicon vias (TSVs) suffer performance degradation due to stress induced by the TSVs, leading to non-uniform loading effects and difficulty in TSV pitch shrinkage, especially in face-to-back die-to-die communications.

Innovation Solution

Integrate boundary cells or boundary tap cells into the keep-out-zone (KOZ) around the TSV without dummy devices, and form a guard structure to prevent stress-induced damage, allowing for reduced KOZ dimensions and improved signal bandwidth.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If dummy devices are placed in the keep-out-zone around TSV to maintain uniform loading effects, then device distribution uniformity is improved, but area overhead increases and TSV pitch shrinkage becomes difficult

Engineering Contradiction:

Improvedevice distribution uniformityVSAvoidkeep-out-zone area

Core Design Contradiction:

Stability of the object's compositionVSArea of stationary object

Solution Approach 1:

The patent extracts and removes the dummy devices from the keep-out-zone, eliminating the need for additional area while maintaining uniform loading effects through the guard structure alone

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The guard structure acts as an intermediary element that provides the necessary stress compensation and uniform loading effects previously achieved only through dummy devices, allowing the keep-out-zone to be minimized

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If keep-out-zone dimensions are reduced to enable TSV pitch shrinkage, then productivity and signal bandwidth are improved, but stress-induced damage to nearby devices increases

Engineering Contradiction:

ImproveTSV pitch shrinkage capabilityVSAvoidstress-induced damage

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The guard structure is formed in advance to counteract and neutralize the stress-induced harmful effects before they can damage nearby devices, enabling safe reduction of the keep-out-zone dimensions

Inventive Principle:

Principle #9Preliminary anti-action

Solution Approach 2:

The guard structure converts the potentially harmful stress fields into beneficial uniform loading effects that protect nearby devices while allowing closer TSV spacing

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

3Reliability

If guard structure is formed to prevent stress-induced damage, then device reliability is improved, but manufacturing complexity increases

Engineering Contradiction:

Improvedevice performance stabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The guard structure formation is merged with existing manufacturing processes, combining multiple functions into a single integrated structure that provides both stress protection and uniform loading effects

Inventive Principle:

Principle #5Merging (Combining)

Data Source

PatentUS20250364440A1Semiconductor device structure and methods of forming the same

Publication Date: 2025.11.27 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor device structure and methods of forming the same are described. The structure includes a through silicon via (TSV) disposed in an interconnect structure and a substrate, a guard structure located in the interconnect structure surrounding the TSV, and an active region surrounding the guard structure. A space between the guard structure and the active region is free of dummy devices.