TSV Heat Dissipation Structure for 3D Semiconductor Reliability
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Solution Overview
Problem
The high heat flow density in three-dimensional (3D) integrated semiconductor structures, particularly in through silicon via (TSV) structures, leads to excessive heat accumulation, affecting the electrical properties and reliability of the chip.
Innovation Solution
A semiconductor structure is designed with a first heat dissipation structure within the substrate and a second heat dissipation structure on its surface, both surrounding the TSV structure, to enhance heat dissipation. The first heat dissipation structure is formed by doping the substrate to increase its conductivity, and the second heat dissipation structure is composed of a thermally conductive material, ensuring effective heat dissipation through both internal and external channels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If TSV structure is used for 3D integration, then integration performance is improved, but heat dissipation capability deteriorates
Solution Approach 1:
The heat dissipation function is segmented into multiple independent structures: first heat dissipation structures within the substrate, second heat dissipation structures on the substrate surface, and heat dissipation blocks in the dielectric layer. This segmentation allows heat to be dissipated through multiple parallel pathways, solving the heat accumulation problem in TSV structures while maintaining integration performance.
Solution Approach 2:
The patent transitions from traditional planar heat dissipation to three-dimensional heat dissipation by embedding heat dissipation structures at multiple depths (within substrate, on surface, in dielectric layer) and orientations. This multi-dimensional arrangement significantly increases the heat dissipation volume and surface area, effectively addressing the thermal management challenge in 3D integrated structures.
2Temperature
If heat dissipation structures are added, then heat dissipation capability is improved, but device complexity increases
Solution Approach 1:
The first heat dissipation structures serve dual functions: they act as heat dissipation pathways and simultaneously function as doping regions or structural support within the substrate. The second heat dissipation structures on the surface provide both thermal management and potential electrical connection functions. This multi-functionality reduces the need for separate dedicated heat dissipation components, thereby limiting the increase in device complexity.
Solution Approach 2:
The heat dissipation structures are nested within the existing 3D integrated structure: first heat dissipation structures are embedded within the substrate, second heat dissipation structures are positioned on the substrate surface, and heat dissipation blocks are integrated into the dielectric layer. This nesting approach allows heat dissipation functionality to be incorporated without significantly increasing the overall device footprint or structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the temperature of the TSV structure, improves heat dissipation rates, and enhances the reliability and stability of the semiconductor structure by preventing overheating and heat density issues.
Implementation Method 1
a first heat dissipation structure located in the substrate, a heat conductivity of the first heat dissipation structure being higher than a heat conductivity of the substrate
Implementation Method 2
a second heat dissipation structure, the second heat dissipation structure being at least located on an upper surface of the first heat dissipation structure
Data Source
AI summary
The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base, the base including a substrate and a first heat dissipation structure located in the substrate, heat conductivity of the first heat dissipation structure being higher than that of the substrate, the substrate including an upper surface and a lower surface opposite to each other, and a surface of the first heat dissipation structure being exposed on the upper surface of the substrate; a second heat dissipation structure, the second heat dissipation structure being at least located on an upper surface of the first heat dissipation structure; and a through silicon via (TSV) structure, the TSV structure penetrating through an entire thickness of the second heat dissipation structure and extending into the base, the second heat dissipation structure surrounding the TSV structure, and the first heat dissipation structure surrounding the TSV structure.