TSV Insulating Structure with Segmented Closed Loop
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Solution Overview
Problem
The high fabrication cost of conventional through-silicon via (TSV) structures hinders their widespread adoption in electronic systems, despite their benefits for 3D/2.5D integration and superior performance compared to conventional interconnects.
Innovation Solution
A TSV structure is developed with a bulk region and a via extending through the substrate, where an insulating structure forms a closed loop around the via with a seam portion separated by solid portions, and an insulating region separates the via from the bulk region, providing electrical isolation and enhanced mechanical reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional TSV structures are used, then electrical connection through substrate is achieved, but fabrication cost is high
Solution Approach 1:
The insulating structure is divided into a seam portion and solid portions, creating a segmented closed loop around the via. This segmentation allows the structure to maintain electrical isolation while reducing fabrication complexity and cost, as the seam portion can be formed through simpler processes compared to a completely continuous insulating structure.
Solution Approach 2:
Different portions of the insulating structure have different properties: the seam portion provides electrical isolation with reduced fabrication requirements, while the solid portions provide enhanced mechanical strength and structural reliability. This local differentiation allows optimization of both cost and reliability in different regions of the same structure.
2Reliability
If insulating structure forms closed loop around via, then electrical isolation is provided, but fabrication complexity increases
Solution Approach 1:
The closed loop insulating structure is segmented into a seam portion and solid portions. The seam portion can be formed using simpler etching and filling processes, while the solid portions are strategically placed to provide necessary isolation. This segmentation reduces overall fabrication complexity while maintaining the electrical isolation function.
Solution Approach 2:
Instead of forming a complete continuous insulating structure around the entire via, the invention uses a seam portion that provides sufficient electrical isolation for the critical regions, combined with solid portions at key locations. This partial approach achieves the necessary isolation without the full complexity of a complete continuous structure.
3Reliability
If insulating region separates via from bulk region, then electrical isolation is improved, but structural strength may be reduced
Solution Approach 1:
The insulating structure uses solid portions at critical locations where mechanical strength is needed, while the seam portion provides electrical isolation in regions where structural support is less critical. This local differentiation ensures that electrical isolation is maintained without compromising overall structural integrity.
Solution Approach 2:
The insulating structure combines different types of insulating features (seam portion and solid portions) within a single closed loop structure. This composite approach allows the structure to simultaneously provide electrical isolation and maintain structural strength by using the appropriate insulating feature in the right location.
Data Source
AI summary
Disclosed is a method of forming an interconnect in a substrate having a first surface and a second surface. The method includes forming an insulating structure abutting the first surface and defining a closed loop around a via in the substrate and forming an insulating region abutting the second surface such that the insulating region contacts the insulating structure and separates the via from a bulk region of the substrate. Forming the insulating structure includes etching the substrate beginning from the first surface to form a trench, filling the trench to form a seam portion, and converting a first portion of the substrate to a first solid portion to form the closed loop.


