Conductive TSV with Insulating Annular Ring
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Solution Overview
Problem
The existing process of forming conductive Through Silicon Vias (TSVs) with insulating rings in semiconductor devices results in insulating material residue on the underlying conductive layers, leading to high contact resistance and manufacturing defects due to the need for time-consuming residue removal.
Innovation Solution
The method involves forming a conductive via through the semiconductor die and then depositing an insulating material around it, creating an insulating annular ring that electrically isolates the TSV with low contact resistance and reduces thermal and mechanical stress, eliminating the need for residue removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If insulating material is deposited into vias before forming conductive TSV, then insulating ring is formed, but insulating material residue remains on conductive layer causing high contact resistance and defects
Solution Approach 1:
The patent inverts the conventional sequence by forming conductive TSV first and then depositing insulating material around the formed TSV. This reversal eliminates the residue problem because the insulating material is deposited on the exterior surface rather than inside the via where residue would trap against the conductive layer.
Solution Approach 2:
The conductive TSV is formed in advance before the insulating ring deposition. This preliminary formation of the conductive structure allows subsequent insulating material to be applied without creating residue, as the TSV already occupies the via space and the insulating material deposits only on the outer surface.
2Manufacturing precision
If insulating material is deposited into vias before forming conductive TSV, then insulating ring is formed, but time-consuming residue removal process is required
Solution Approach 1:
By reversing the process sequence to form TSV first and deposit insulating material second, the patent eliminates the need for residue removal steps. The insulating material deposits cleanly on the exterior surface without trapping residue that would require additional cleaning processes.
Solution Approach 2:
The problematic residue removal step is extracted and eliminated from the process flow. The inverted sequence naturally prevents residue formation, making the removal step unnecessary and thus improving manufacturing productivity.
3Quantity of substance
If conventional TSV formation process is used, then conductive via is formed, but insulating material residue causes manufacturing defects
Solution Approach 1:
The patent inverts the process sequence so that conductive TSV formation precedes insulating ring deposition. This ensures that when insulating material is applied, it deposits on the exterior surface around the already-formed TSV, preventing residue from contaminating the conductive layer interface and ensuring high contact quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs and defects by forming the conductive TSV prior to the insulating ring, ensuring no residue is left on the conductive layer, thus improving the reliability and efficiency of the semiconductor device packaging.
Implementation Method 1
depositing an insulating material around it, creating an insulating annular ring
Data Source
AI summary
A semiconductor wafer has an insulating layer formed over an active surface of the wafer. A conductive layer is formed over the insulating layer. A first via is formed from a back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. A conductive material is deposited in the first via to form a conductive TSV. An insulating material can be deposited in the first via to form an insulating core within the conductive via. After forming the conductive TSV, a second via is formed around the conductive TSV from the back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. An insulating material is deposited in the second via to form an insulating annular ring. The conductive via can be recessed within or extend above a surface of the semiconductor die.