TSV Insulating Layer Stress Management
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Solution Overview
Problem
The challenge in producing semiconductor devices with through-silicon vias (TSVs) is the difficulty in miniaturization due to the low requirement for TSV miniaturization, which complicates the manufacturing process and affects yield, especially when forming TSVs in miniaturized components, and the need for low-temperature processing to prevent substrate degradation.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with a thin insulating layer of silicon oxide film with a thickness of 1 μm or less, containing OH bonds, which is formed at low temperatures to prevent substrate degradation and minimize stress, allowing for effective TSV formation without cracking, and a method involving specific metal layers and deposition techniques to ensure connectivity and structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a through-silicon via (TSV) is formed in a miniaturized component after the manufacturing of the component, then the TSV connects various parts of the substrate to the exterior thereof, but the forming of a TSV has less influence on the yield of a semiconductor device and the manufacturing process becomes more complex
Solution Approach 1:
The patent applies preliminary action by forming the insulating film on the TSV inner surface before completing the TSV formation process. This preliminary insulation layer prevents cracking during subsequent processing steps and eliminates the need for complex post-component-manufacturing TSV formation, thereby simplifying the overall manufacturing process while maintaining TSV connectivity functionality
2Temperature
If the substrate is thinned to form a TSV, then the TSV can be formed at low temperatures, but the substrate degradation and stress increase
Solution Approach 1:
The patent applies beforehand cushioning by depositing an insulating film on the inner surface of the TSV before completing the TSV formation. This insulating film acts as a cushioning layer that prevents cracking and reduces stress concentration in the thinned substrate, thereby maintaining substrate stability during low-temperature TSV formation processes
3Strength
If a thick insulating layer is used to prevent cracking, then the structural integrity is improved, but the stress and moisture absorption increase
Solution Approach 1:
The patent applies parameter changes by optimizing the insulating film thickness to a specific range (1 nm to 10 nm). This precise parameter control provides sufficient crack resistance while minimizing unnecessary material accumulation, thereby reducing stress and moisture absorption associated with excessive insulating layer thickness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the successful formation of TSVs without cracking, maintaining the semiconductor device's structural integrity and yield, even in miniaturized components, by controlling the thickness and bonding of the insulating layer to manage internal stress and moisture absorption.
Implementation Method 1
an insulating film including OH bonds located between the semiconductor substrate and the metal layer, the insulating film having a thickness of 1 μm or less... managing internal stress and moisture absorption
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a through via extending through the semiconductor substrate from the first surface to the second surface, a metal layer adjacent an inside surface of the through via, and an insulating film including OH bonds located between the semiconductor substrate and the metal layer, the insulating film having a thickness of 1 μm or less.