Through Silicon Via Insulating Ring Design
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Solution Overview
Problem
The existing methods for forming through silicon vias (TSVs) face challenges in balancing the thickness of insulating layers for improved insulating properties and reduced parasitic capacity, as thin layers are required for processability but thick layers are needed for functionality, and hollow insulating rings lack control over parasitic capacity and diffusion prevention.
Innovation Solution
A semiconductor device configuration that includes a wiring layer, a through hole penetrating the substrate, an annular groove filled with insulating material, and a thin insulating film on the side wall, allowing for reduced insulating film thickness while maintaining sufficient overall insulating properties and preventing diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulating layer thickness is increased to improve insulating properties and prevent diffusion, then the insulating effect is enhanced, but the processability deteriorates due to difficulty in removing the insulating layer from the bottom surface without damaging the wiring
Solution Approach 1:
The insulating structure is divided into two separate components: an insulating film formed on the side wall of the through hole, and an insulating ring formed in an annular groove surrounding the through hole. This segmentation allows each component to be optimized independently - the insulating film can be made thin for processability while the insulating ring provides the necessary insulating effect and diffusion prevention.
Solution Approach 2:
The insulating ring is extracted as a separate structure from the continuous insulating layer. By forming the insulating ring in an annular groove and filling it with insulating material, the patent removes the need for a thick continuous insulating layer that would be difficult to process, while maintaining the essential insulating and diffusion-preventing functions.
2Ease of manufacture
If the insulating layer thickness is decreased to improve processability, then the ease of manufacture is enhanced, but the insulating properties and diffusion prevention capability deteriorate
Solution Approach 1:
The insulating function is segmented between the insulating film and insulating ring, allowing the insulating film to be thin for easy processing while the insulating ring compensates to provide sufficient overall insulating effect and diffusion prevention.
Solution Approach 2:
The insulating structure uses a composite approach combining an insulating film and an insulating ring made of insulating material. This composite structure achieves the necessary insulating properties and diffusion prevention capability while maintaining thin overall dimensions for improved processability.
3Device complexity
If a hollow insulating ring structure is used to eliminate the insulating layer formation process, then the process complexity is reduced, but the control over parasitic capacity and diffusion prevention is insufficient
Solution Approach 1:
The patent applies different insulating structures in different locations: an insulating film is formed on the side wall of the through hole where direct contact occurs, and an insulating ring is formed in the annular groove surrounding the through hole. This local differentiation provides precise control over parasitic capacity and diffusion prevention in each specific region.
Data Source
AI summary
In a semiconductor device, the thickness of an insulating film formed in a through hole is reduced, while an annular groove having an insulating material embedded therein is provided so as to ensure a sufficient total thickness of the insulator, whereby a through silicon via is provided with an insulating ring which is improved in both processability and functionality.