TSV Keep-Out Zone Reduction via Insulating Stress Barriers
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Solution Overview
Problem
The presence of through-silicon vias (TSVs) in semiconductor substrates induces tensile stress, necessitating a keep-out zone to prevent device circuit degradation, which reduces the area available for forming semiconductor devices.
Innovation Solution
A semiconductor structure with a conductive element and insulating elements surrounding it, forming a reduced keep-out zone that mitigates tensile stress through compressive stress induction, allowing for closer placement of semiconductor devices and maximizing the area for device circuit formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If TSVs are used to connect dies in 3D integrated circuit devices, then connection between dies is achieved, but tensile stress is induced in the surrounding semiconductor material requiring larger keep-out zones
Solution Approach 1:
An insulating element is introduced as an intermediary between the conductive TSV and the semiconductor device circuits. This insulating element acts as a stress barrier that blocks the propagation of tensile stress from the TSV to the surrounding semiconductor material, allowing device circuits to be placed closer to TSVs while maintaining reliability.
Solution Approach 2:
The patent converts the harmful tensile stress induced by TSVs into a beneficial configuration by strategically placing insulating elements that create localized stress management zones. The insulating elements transform the stress distribution pattern, enabling closer device placement without compromising device performance.
2Reliability
If larger keep-out zones are established around TSVs to prevent device degradation, then device performance is protected, but the area available for forming device circuits is reduced
Solution Approach 1:
Instead of establishing a uniform keep-out zone around the entire TSV, the patent applies local quality by placing insulating elements only in specific positions where stress propagation to devices is most critical. This localized approach maintains device performance protection while minimizing the overall keep-out zone area.
Solution Approach 2:
The keep-out zone is segmented into discrete regions defined by individually placed insulating elements rather than a continuous exclusion zone. This segmentation allows device circuits to be placed in areas between insulating elements, maximizing area utilization while maintaining performance protection.
3Area of stationary object
If device circuits are placed closer to TSVs to maximize area utilization, then area efficiency is improved, but device circuits are exposed to tensile stress causing performance degradation
Solution Approach 1:
Insulating elements serve as intermediary stress barriers positioned between TSVs and device circuits, enabling close placement of devices to TSVs while blocking harmful tensile stress from reaching the devices.
Solution Approach 2:
The insulating elements are placed in advance during manufacturing to preemptively block stress propagation paths before devices are fully formed or before stress-induced damage can occur, allowing safe close placement of devices to TSVs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reduced keep-out zone minimizes device shifts caused by tensile stress, enabling increased area utilization for semiconductor devices while maintaining performance by balancing stress within the substrate.
Implementation Method 1
the insulating elements induce compressive stress in the surrounding semiconductor material to counterbalance the tensile stress generated by the conductive element
Data Source
AI summary
A semiconductor structure includes a semiconductor substrate and a conductive element formed in a portion of the semiconductor substrate. The semiconductor structure further includes a plurality of insulating elements formed in portions of the semiconductor substrate at a first region surrounding the conductive element and a semiconductor device formed over a portion of the semiconductor substrate at a second region adjacent to the first region. The first region is formed between the conductive element and the second region.