TSV Insulation Structure to Block Moisture-Driven Electrode Corrosion
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Solution Overview
Problem
Existing through silicon via (TSV) structures in semiconductor devices are prone to oxidation and corrosion due to moisture infiltration, which compromises their reliability.
Innovation Solution
A semiconductor device with a TSV structure is designed to include a first and second protecting insulation layer that protrudes from the ends of the second electrode, preventing moisture infiltration and galvanic corrosion, and a capping layer to fill the via hole, using non-metal based insulation materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional TSV structure is used without additional protecting layers, then the device complexity is reduced, but the electrode is prone to oxidation and corrosion due to moisture infiltration
Solution Approach 1:
The protecting insulation layer is divided into multiple segments: a first protecting insulation layer covering the side surface of the second electrode, and a second protecting insulation layer covering the upper end of the second electrode. This segmentation provides comprehensive protection against moisture infiltration from different directions, preventing oxidation and corrosion of the electrode while maintaining a manageable structural complexity
Solution Approach 2:
The patent employs composite material structure by combining different insulation materials (first and second protecting insulation layers with different properties) to protect the electrode. This composite approach enhances protection effectiveness against moisture and oxidation, improving electrode reliability without excessive complexity increase
2Reliability
If the protecting insulation layer completely covers the second electrode including upper end, then oxidation and corrosion are prevented, but manufacturing precision requirements increase
Solution Approach 1:
The protecting insulation structure is segmented into two distinct layers: the first protecting insulation layer formed on the side surface of the second electrode, and the second protecting insulation layer formed on the upper end. This segmentation allows each layer to be formed with optimized process parameters and reduces the precision requirements for each individual layer compared to forming a single comprehensive protecting layer
Solution Approach 2:
The first protecting insulation layer is formed on the side surface of the second electrode before forming the second protecting insulation layer on the upper end. This preliminary action ensures that the side surface is protected first, and then the upper end is sealed, making the manufacturing process more controllable and reducing overall precision requirements
Data Source
AI summary
A semiconductor device may include a via hole, a first electrode, a second electrode and a first protecting insulation layer. The via hole may be formed to penetrate a substrate. The first electrode may include an electrode segment formed on a surface of the via hole. The second electrode may be formed on the first electrode along the surface of the via hole. The second electrode may include two ends that are positioned below a surface of the substrate. The first protecting insulation layer may be formed on the second electrode along the surface of the via hole. The first protecting insulation layer may include both ends that upwardly protrude from the both ends of the second electrode.