TSV Electrode Insulation Structure Against Moisture Corrosion

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing through silicon via (TSV) structures in semiconductor devices are prone to oxidation and corrosion due to moisture infiltration, which compromises their reliability.

Innovation Solution

A semiconductor device with a TSV structure is designed to include a first and second protecting insulation layer that protrude from the ends of the second electrode, preventing moisture infiltration and galvanic corrosion, using non-metal based insulation materials like silicon oxynitride and silicon nitride to ensure a flat surface for effective coverage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the second electrode is formed to extend below the substrate surface to prevent oxidation, then the reliability is improved, but the manufacturing complexity increases due to the need for precise depth control and additional protecting insulation layers

Engineering Contradiction:

Improveoxidation resistanceVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The protecting insulation structure is segmented into multiple layers: a first protecting insulation layer that protrudes from the substrate surface to prevent moisture infiltration, and a second protecting insulation layer that fills the via hole and covers the electrode. This segmentation allows each layer to perform its specific protective function independently, resolving the contradiction between reliability improvement and structural complexity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The first protecting insulation layer is formed to protrude from the substrate surface before the second protecting insulation layer is deposited. This preliminary action creates a protective barrier that prevents oxidation of the electrode ends before they are covered, allowing the subsequent filling process to be simpler and more reliable.

Inventive Principle:

Principle #10Preliminary action

2Reliability

If the via hole is formed to penetrate the substrate deeply to ensure electrical connection, then the electrical connectivity is improved, but the susceptibility to moisture infiltration and oxidation increases

Engineering Contradiction:

Improveelectrical connectivityVSAvoidmoisture infiltration

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A multi-layer protecting insulation film structure is applied around the electrode: the first protecting insulation layer acts as a protruding barrier film that prevents moisture infiltration at the critical electrode ends, while the second protecting insulation layer forms a filling film that seals the via hole. This flexible multi-layer film approach effectively protects the deep via structure from moisture without compromising electrical connectivity.

Inventive Principle:

Principle #30Flexible shells and thin films

Solution Approach 2:

The first protecting insulation layer serves as an intermediary barrier between the electrode and the external environment. By protruding from the substrate surface, it mediates the interaction between moisture and the electrode, preventing direct contact and oxidation while allowing the electrode to maintain its deep penetration for electrical connectivity.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Reliability

If the protecting insulation layer protrudes significantly from the electrode ends to prevent oxidation, then the oxidation protection is improved, but the flatness of the surface for subsequent processing deteriorates

Engineering Contradiction:

Improveoxidation protectionVSAvoidsurface flatness

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The protecting insulation structure is divided into two functional segments: the first protecting insulation layer that protrudes to provide oxidation protection, and the second protecting insulation layer that fills the via hole to restore surface flatness. This segmentation allows the protruding portion to perform its protective function while the filling portion maintains manufacturing precision for subsequent processing steps.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The first protecting insulation layer protrudes from the substrate surface in advance to cushion against moisture infiltration and oxidation. This beforehand protective measure prevents damage to the electrode before the second protecting insulation layer is deposited to restore the surface, effectively cushioning against both oxidation and subsequent processing requirements.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS12400937B2Semiconductor device including a through silicon via structure and method of fabricating the same

Publication Date: 2025.08.26 SK HYNIX INC

AI summary

A semiconductor device may include a via hole, a first electrode, a second electrode and a first protecting insulation layer. The via hole may be formed to penetrate a substrate. The first electrode may include an electrode segment formed on a surface of the via hole. The second electrode may be formed on the first electrode along the surface of the via hole. The second electrode may include two ends that are positioned below a surface of the substrate. The first protecting insulation layer may be formed on the second electrode along the surface of the via hole. The first protecting insulation layer may include both ends that upwardly protrude from the both ends of the second electrode.