TSV Insulation for Semiconductor Yield
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Solution Overview
Problem
The via-last process in semiconductor device manufacturing faces challenges in producing finer devices due to the difficulty in forming TSVs after device formation, leading to low device yield and the need for low-temperature TSV formation, which complicates the process and increases defect formation.
Innovation Solution
A semiconductor device and manufacturing method that include a semiconductor substrate with through-holes, metal portions, and insulating films with specific dielectric constants, where the second insulating film has a dielectric constant of not more than 6.5, enhancing moisture-proofing and preventing electrical short circuits, and silicon oxide films are formed at controlled temperatures to minimize defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If TSVs are formed after device formation (via-last process), then connection is made outside the devices, but device yield decreases due to difficulty in producing finer devices
Solution Approach 1:
The patent forms TSVs before device formation rather than after, performing the via formation action in advance. This preliminary action allows the TSV structure to be established while the substrate is more accessible and easier to process, avoiding the yield loss that occurs when attempting to form TSVs after fine devices have already been created.
2Temperature
If TSVs are formed at low temperature, then the via-last process can proceed, but silicon oxide films form defects
Solution Approach 1:
The patent changes the temperature parameter from low temperature to high temperature (400°C or higher) for TSV formation. This parameter change enables proper formation of silicon oxide films without defects, as the higher temperature provides the necessary thermal energy for complete oxidation and defect-free film formation, while still allowing the TSV process to proceed effectively.
3Productivity
If devices are made finer, then device density increases, but TSV formation becomes increasingly difficult
Solution Approach 1:
By forming TSVs before device fabrication, the patent performs the via formation while the substrate is in a more manageable state. This preliminary action eliminates the difficulty of forming TSVs through already-fabricated fine devices, allowing high-density device structures to be created without compromising TSV formation quality.
4Manufacturing precision
If silicon oxide films are formed at high temperature, then film quality improves, but the process becomes more complex
Solution Approach 1:
The patent combines the TSV formation process with the silicon oxide film formation process into a single integrated step. By merging these two processes, the high-temperature oxidation that forms quality silicon oxide films also simultaneously forms the TSV structures, eliminating the need for separate process steps and reducing overall process complexity despite the high temperature requirement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents defect formation in silicon oxide films, enhances the yield of semiconductor devices by controlling the formation of silicon oxide films, and ensures effective electrical connectivity through the use of specific insulating films, addressing the challenges of low-temperature TSV formation and device fineness.
Implementation Method 1
a second insulating film having a dielectric constant of not more than 6.5, provided on the metal portion-side surface of the first insulating film
Implementation Method 2
a first insulating film provided on the second surface of the semiconductor substrate and on the side surface of the through-hole
Data Source
AI summary
According to some embodiments, a semiconductor device includes a semiconductor substrate, a metal portion, a first insulating film, and a second insulating film. The semiconductor substrate has a through-hole extending from a first surface of the semiconductor substrate to a second surface thereof opposite to the first surface. The metal portion is formed in the through-hole. The first insulating film is provided on the second surface of the semiconductor substrate and on a side surface of the through-hole. The second insulating film has a dielectric constant of not more than 6.5 and is provided on a metal portion-side surface of the first insulating film on the side surface of the through-hole of the semiconductor substrate.