Through Silicon Via Insulation Thickness for Warpage Control
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Solution Overview
Problem
Conventional through silicon via (TSV) techniques in semiconductor packaging face issues due to improper insulation layer thickness, which can lead to heat expansion interfering with redistribution layers and warpage problems, affecting electrical connections and yield rates.
Innovation Solution
The use of a silicon substrate with through holes containing conductive vias, where the insulation layer's radius difference between the through hole and central hole is within a specific range (5 to 19 μm) and the substrate thickness is between 75 to 150 μm, ensuring stable electrical connections and preventing warpage during heat processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the insulation layer is made thicker to prevent heat expansion interference, then thermal stability is improved, but the insulation layer expands due to heat and interferes with the redistribution layer
Solution Approach 1:
The patent optimizes the insulation layer thickness to a specific range (5-19 μm) to balance thermal stability and prevent excessive heat expansion that would interfere with the redistribution layer. This parameter optimization resolves the contradiction by finding the optimal thickness that provides sufficient thermal stability while limiting expansion.
Solution Approach 2:
The patent applies different material properties to different parts of the structure - the insulation layer is positioned specifically between the conductive via and the redistribution layer to provide localized thermal management, while the substrate thickness is optimized independently (75-150 μm) to control overall warpage. This localized quality approach allows each component to address specific issues without causing harmful side effects.
2Stability of the object's composition
If the silicon substrate is made thinner to reduce warpage, then warpage during heat process is reduced, but electrical connection reliability deteriorates
Solution Approach 1:
The patent optimizes the substrate thickness to a specific range (75-150 μm) that balances warpage reduction and electrical connection reliability. This parameter optimization ensures the substrate is thin enough to minimize warpage during heat processes but thick enough to maintain structural integrity and reliable electrical connections.
3Ease of manufacture
If the insulation layer radius difference is not controlled properly, then manufacturing is simpler, but metal pads break or become overly thin
Solution Approach 1:
The patent specifies an optimal range for the insulation layer radius difference (5-19 μm) that prevents metal pad breakage and excessive thinning during manufacturing. This parameter control ensures reliable electrical connections while maintaining manufacturability within defined tolerances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents metal pad breakage, ensures reliable electrical connections, and increases product yield by maintaining the integrity of insulation layers and substrate stability during heat processes, thus simplifying manufacturing and reducing costs.
Implementation Method 1
if the insulation layer is too thick, it may expand due to heat to such an extent that it interferes with a redistribution layer (RDL)
Implementation Method 2
connected using conductive vias which are vertical pathways of interconnects that run through the chips
Data Source
AI summary
The present invention relates to a semiconductor element having conductive vias and a semiconductor package having a semiconductor element with conductive vias and a method for making the same. The semiconductor element having conductive vias includes a silicon substrate and at least one conductive via. The thickness of the silicon substrate is substantially in a range from 75 to 150 μm. The conductive via includes a first insulation layer and a conductive metal, and the thickness of the first insulation layer is substantially in a range from 5 to 19 μm. Using the semiconductor element and the semiconductor package of the present invention, the electrical connection between the conductive via and the other element can be ensured, and the electrical connection between the silicon substrate and the other semiconductor element can be ensured, so as to raise the yield rate of a product. Moreover, by employing the method of the present invention, warpage and shift of the silicon substrate can be avoided during the reflow process, so as to conduct the reflow process only a single time in the method of the present invention, thereby simplifying the subsequent process and reducing cost.