TSV Interconnect Elevator for Low-NRE FPGA-HBM 3D Packaging

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Solution Overview

Problem

The high Non-Recurring Engineering (NRE) cost of designing Application Specific IC (ASIC) or Customer-Owned Tooling (COT) chips using advanced semiconductor technology nodes slows down innovation and increases barriers for implementing advanced IC technology in semiconductor chips.

Innovation Solution

A Field Programmable Gate Array (FPGA)/High Bandwidth Memory (HBM) stacked 3D Chip-Scale-Package (CSP) is proposed, which includes a FPGA IC chip with programmable interconnections and a HBM IC chip or HBM SCSP, stacked using flip-chip bonding or direct bonding, to reduce the need for expensive ASIC or COT designs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If ASIC or COT IC chip is designed using advanced semiconductor technology nodes, then performance and power efficiency are improved, but NRE cost increases greatly

Engineering Contradiction:
Improvepower consumptionVSAvoidNRE cost
Core Design Contradiction:
PowerVSEase of manufacture

Solution Approach 1:

The patent segments the IC design into two parts: a reusable standard cell library (developed once at high NRE cost) and application-specific logic (developed separately at low NRE cost). This allows the expensive advanced technology node to be used for the library, while individual applications can reuse it without bearing the full NRE burden.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The standard cell library serves multiple applications universally. Once created using advanced technology nodes, the same library can be reused across numerous different ASIC or COT designs, amortizing the high NRE cost over many products and making advanced technology accessible to applications with smaller volume demands.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Productivity

If ASIC or COT IC chip is designed using advanced semiconductor technology nodes, then performance is improved, but NRE cost increases greatly

Engineering Contradiction:
ImproveperformanceVSAvoidNRE cost
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent segments the IC design into a reusable standard cell library and application-specific logic. The library is developed once using advanced technology nodes to capture performance benefits, while individual applications can access this performance without repeating the expensive development process.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The standard cell library is created in advance using advanced technology nodes, performing the expensive development work beforehand. This preliminary action allows subsequent applications to benefit from advanced technology performance without incurring the same high NRE costs.

Inventive Principle:
Principle #10Preliminary action

3Adaptability or versatility

If FPGA IC chip is used for given application, then adaptability is maintained, but chip size is larger, fabrication yield is lower, and fabrication cost is higher

Engineering Contradiction:
ImproveadaptabilityVSAvoidfabrication cost
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent segments the design into a standardized library and application-specific portions. This allows the library to be optimized for manufacturing efficiency while maintaining the ability to adapt to different applications through the configurable logic layers, achieving a balance between adaptability and manufacturing efficiency.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the parameter of design reconfigurability by providing a middle ground between fixed ASIC and fully reconfigurable FPGA. The standard cell library provides fixed, optimized structures while allowing application-specific customization, achieving better manufacturing efficiency than FPGA while maintaining some adaptability.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS12327790B2Vertical interconnect elevator based on through silicon vias
Publication Date: 2025.06.10 ICOMETRUE CO LTD
  • US12327790B2 patent drawing
  • US12327790B2 patent drawing
  • US12327790B2 patent drawing

AI summary

A chip package includes a first integrated-circuit (IC) chip; a second integrated-circuit (IC) chip over the first integrated-circuit (IC) chip; a connector over the first integrated-circuit (IC) chip and on a same horizontal level as the second integrated-circuit (IC) chip, wherein the connector comprises a substrate over the first integrated-circuit (IC) chip and a plurality of through vias vertically extending through the substrate of the connector; a polymer layer over the first integrated-circuit (IC) chip, wherein the polymer layer has a portion between the second integrated-circuit (IC) chip and connector, wherein the polymer layer has a top surface coplanar with a top surface of the second integrated-circuit (IC) chip, a top surface of the substrate of the connector and a top surface of each of the plurality of through vias; and an interconnection scheme on the top surface of the polymer layer, the top surface of the second integrated-circuit (IC) chip, the top surface of the connector and the top surface of each of the plurality of through vias.