TSV Interconnect Wraparound Structure for Adhesion
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Solution Overview
Problem
The existing methods for forming semiconductor devices with through-silicon-vias (TSVs) face challenges in maintaining adhesion between TSVs and interconnects during the singulation process, leading to inadvertent displacement of interconnects from the dicing tape, especially when the TSV diameter is small.
Innovation Solution
The semiconductor device design includes a through-silicon-via with a conductive core and liner material, encapsulated by an interconnect that extends around the TSV protrusion, providing increased contact surface area and improved adhesion through the use of conductive plugs and dielectric materials, which enhances the anchoring mechanism and reduces separation during die removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the TSV diameter is reduced to decrease device footprint, then the footprint area is reduced, but the adhesion between TSV and interconnect deteriorates leading to interconnect displacement
Solution Approach 1:
The interconnect is designed to extend around the TSV protrusion in a three-dimensional configuration, transforming from a simple planar connection to a wraparound structure. This dimensional change increases the contact surface area between interconnect and TSV, providing enhanced adhesion and anchoring strength even when the TSV diameter is reduced, thus resolving the contradiction between miniaturization and adhesion reliability
Solution Approach 2:
The interconnect is formed to encapsulate the TSV protrusion, creating a nested structure where the interconnect surrounds and anchors to the TSV. This nesting configuration maximizes the interfacial contact area and provides mechanical interlocking, ensuring reliable adhesion while allowing for smaller TSV dimensions and reduced device footprint
2Productivity
If the TSV diameter is reduced to increase integration density, then the integration density is improved, but the anchoring mechanism weakens leading to interconnect separation
Solution Approach 1:
By extending the interconnect around the TSV protrusion in three dimensions, the design compensates for the reduced TSV diameter. The wraparound configuration increases the effective anchoring surface area, maintaining sufficient anchoring strength even with smaller TSVs, thus enabling higher integration density without sacrificing mechanical strength
Solution Approach 2:
The structure employs multiple materials including the TSV conductive core, liner material, dielectric materials, and interconnect material forming a composite system. This composite construction allows optimization of each layer's properties, where the interconnect material provides both electrical conductivity and mechanical anchoring, enabling reduced TSV dimensions while maintaining overall structural strength and integration density
Data Source
AI summary
Semiconductor devices having a through-silicon-via and methods of forming the same are described herein. As an example, a semiconductor device may include a substrate material, a through-silicon-via protrusion extending from the substrate material, a first dielectric material formed on the substrate material, a second dielectric material formed on the first dielectric material, and an interconnect formed on the through-silicon-via protrusion, where the interconnect formed is in an opening in the second dielectric material.