TSV Interconnection Layout Without Extra Metal Pad Area
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Solution Overview
Problem
Conventional TSV interconnection processes for three-dimensional integration involving copper and aluminum metal layers face high process complexity, significant waste of wafer area, and challenges in process control due to the need for multiple photomasks and additional lateral extensions.
Innovation Solution
A method involving a single photomask process to form a first opening in a metal layer, followed by a second metal layer connection, and a TSV extension through the substrate, allowing for a subsequent interconnect layer connection without additional lateral area occupation, thereby reducing complexity and increasing wafer utilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If two photomasks and a Damascene process are employed to fabricate the first copper metal layer, then the aluminum metal layer can be connected to the copper interconnect layer, but the process cost increases and process complexity increases
Solution Approach 1:
The invention extracts and removes the protruding portion of the aluminum metal layer that causes process complexity. By selectively removing only the necessary protruding part of the aluminum layer, the patent simplifies subsequent processing steps while maintaining electrical connection reliability, avoiding the need for multiple photomasks and Damascene processes.
Solution Approach 2:
The invention performs preliminary action by pre-forming the interconnect layer and TSV structure before connecting to the aluminum metal layer. This reverse sequencing allows the copper interconnect layer to be established first, then connected to the aluminum layer, simplifying the overall process flow and reducing the number of photomasks required.
2Reliability
If two photomasks are used to form the first copper metal layer, then the aluminum metal layer can be connected to the copper interconnect layer, but the manufacturing cost increases
Solution Approach 1:
The invention extracts and removes the protruding portion of the aluminum metal layer that causes process complexity. By selectively removing only the necessary protruding part of the aluminum layer, the patent simplifies subsequent processing steps while maintaining electrical connection reliability, avoiding the need for multiple photomasks and Damascene processes.
3Adaptability or versatility
If additional lateral extension is provided for accommodating the TSV passage, then the TSV can be formed, but the wafer's effective area is wasted
Solution Approach 1:
The invention transitions from horizontal lateral extension to vertical depth utilization. By forming the TSV to extend through the substrate thickness rather than requiring lateral area extension, the patent enables TSV formation while maximizing the utilization of the wafer's effective surface area for placing functional elements.
4Reliability
If high control complexity is involved to enable desirable contact of the first copper metal layer with the aluminum metal layer, then electrical connection can be achieved, but the process control difficulty increases
Solution Approach 1:
The invention extracts and removes the protruding portion of the aluminum metal layer that causes process complexity. By selectively removing only the necessary protruding part of the aluminum layer, the patent simplifies subsequent processing steps while maintaining electrical connection reliability, avoiding the need for multiple photomasks and Damascene processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces process complexity, minimizes wafer area waste, and enhances electrical connectivity by using fewer photomasks, while ensuring reliable electrical connections through a single photolithography step.
Implementation Method 1
etching away part of the first metal layer, resulting in the formation of a first opening in the first metal layer
Implementation Method 2
forming a second metal layer, which is filled in the first opening and electrically connected to the remainder of the first metal layer
Implementation Method 3
forming a TSV, which sequentially extends through the substrate and a partial thickness of the dielectric layer
Data Source
AI summary
A semiconductor device and a manufacturing method therefor are disclosed, in which a first opening is formed in a first metal layer by etching away part of the first metal layer, and a second metal layer is filled in the first opening and is electrically connected to the remainder of the first metal layer. A TSV extends sequentially through a substrate and a partial thickness of a dielectric layer so that the second metal layer is exposed therein, and an interconnect layer in the TSV is electrically connected to the second metal layer. In this way, the first metal layer can be picked up as long as projections of the second metal layer and the interconnect layer on the substrate are encompassed within a projection of the first metal layer on the substrate, without any additional lateral area of the first metal layer being occupied by the TSV.