TSV Isolation Ring Structure for Parasitic Capacitance Control
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Solution Overview
Problem
Current semiconductor structures face performance issues due to parasitic capacitance generated by through-silicon via (TSV) structures, leading to potential electrical leakage under high pressure, which affects the efficiency of CMOS image sensors.
Innovation Solution
The implementation of an isolation ring structure around TSVs, comprising deep trench and shallow trench isolation structures, to prevent parasitic capacitance and electrical leakage, using materials like silicon oxide, polysilicon, and tungsten, and bonding techniques to enhance electrical isolation and mechanical strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If TSV structures are used for interconnection, then electrical connectivity is improved, but parasitic capacitance increases and electrical leakage occurs
Solution Approach 1:
An isolation ring structure comprising a first isolation layer and a second isolation layer is introduced as an intermediary between the TSV structure and the substrate. The first isolation layer is formed on the sidewall of the TSV structure, and the second isolation layer is formed on the first isolation layer, creating a mediating barrier that reduces parasitic capacitance and prevents electrical leakage while maintaining electrical connectivity through the TSV structure.
2Adaptability or versatility
If TSV structures extend deep into the substrate, then interconnection capability is improved, but electrical leakage to the substrate increases
Solution Approach 1:
The isolation ring structure with dual isolation layers serves as a mediating barrier that prevents direct electrical contact between the deep TSV structure and the substrate, thereby eliminating electrical leakage while preserving the TSV's interconnection capability. The first isolation layer directly contacts the TSV sidewall, and the second isolation layer provides an additional protective barrier.
Solution Approach 2:
The isolation layers are formed preliminarily on the TSV structure before final device operation, creating a preventive barrier against electrical leakage. The first isolation layer is formed conformally on the TSV sidewall, and the second isolation layer is subsequently formed to provide preliminary protection against potential electrical leakage paths.
Data Source
AI summary
The present disclosure relates to a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a first wafer, including a first substrate and a first dielectric layer on the first substrate, a plurality of through-silicon via (TSV) structures in an array arrangement are formed in the first substrate, and the TSV structures extend through the first substrate along a direction from the first substrate to the first dielectric layer and extend into a partial thickness of the first dielectric layer; and an isolation ring structure, arranged in the first substrate around the plurality of TSV structures and extending through the first substrate along the direction from the first substrate to the first dielectric layer.