TSV Landing Pad for 3D IC Contact Reliability
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Solution Overview
Problem
Existing 3D integrated circuit devices with through-silicon-via (TSV) structures face challenges in achieving stable operational characteristics and high reliability due to contact defects caused by process variations during the manufacturing of TSV connections between multi-layered interconnection structures and TSV structures.
Innovation Solution
The integration of a TSV landing pad with the same material as the electrode, connected to a multi-layered interconnection structure through a TSV structure passing through the substrate, which includes a non-metallic conductive layer and a metal layer, and a dielectric film to ensure reliable electrical connections without contact defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a TSV structure is formed to connect multi-layered interconnection structures, then vertical electrical connection is achieved, but contact defects occur due to process variation
Solution Approach 1:
The landing pad is formed in advance on the substrate before the TSV structure is created. This preliminary formation ensures that the target location for TSV connection is pre-defined and stable, allowing subsequent TSV formation to align with this predetermined location even when process variations occur during TSV fabrication.
Solution Approach 2:
The landing pad acts as an intermediary element between the multi-layered interconnection structure and the TSV structure. It provides a stable intermediate connection point that absorbs misalignment caused by process variations, ensuring reliable electrical connection between the interconnection structure and the TSV without direct contact between the two main components.
2Stability of the object's composition
If material consistency is maintained between electrode and TSV landing pad, then operational stability is improved, but manufacturing complexity increases
Solution Approach 1:
The landing pad is formed using the same material and process as the electrode, merging their material composition. This is achieved by forming a continuous conductive layer that serves both as electrode material and landing pad material, eliminating the need for separate material deposition processes and ensuring consistent material properties throughout the connection structure.
Solution Approach 2:
The conductive material layer serves dual functions: it acts as the electrode for electrical connection and simultaneously forms the landing pad for TSV alignment and connection. This multi-functionality reduces the number of distinct manufacturing steps while maintaining material consistency between the electrode and landing pad regions.
Data Source
AI summary
An integrated circuit device is provided. The integrated circuit device includes: a capacitor including an electrode formed in a first area on a substrate; a through-silicon-via (TSV) landing pad formed in a second area on the substrate, the TSV landing pad including the same material as the electrode; a multi-layered interconnection structure formed on the capacitor and the TSV landing pad; and a TSV structure passing through the substrate, the TSV structure being connected to the multi-layered interconnection structure through the TSV landing pad.