Multi-Layer TSV Landing Pad for 3D IC Structural Integrity
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Solution Overview
Problem
There is a need for a technology that enhances the stability and reliability of through-silicon via (TSV) structures in integrated circuit (IC) devices to improve the performance and reliability of 3D packages, as existing methods face challenges in maintaining consistent connections and structural integrity.
Innovation Solution
The implementation of a multi-layer TSV landing pad structure on the substrate, comprising different pad layers and contact plugs, with conductive barrier films, and an insulating film, which allows for a stable and reliable connection between the TSV structure and the multi-layer wiring structure, ensuring robust electrical connections and structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a through-silicon via (TSV) structure is implemented to enable vertical electrical connection in 3D packages, then the connectivity and integration density are improved, but the structural integrity and reliability during etching processes deteriorate
Solution Approach 1:
The TSV landing pad is divided into multiple layers (first pad layer, second pad layer, third pad layer) with different materials and functions. Each layer segment performs a specific role: the first pad layer provides initial contact, the second pad layer enhances adhesion, and the third pad layer provides final electrical connection. This segmentation allows each layer to be optimized for its specific function, improving overall structural integrity while maintaining high integration density.
Solution Approach 2:
The multi-layer TSV landing pad structure uses composite materials with different properties at each layer. The first pad layer may use a material optimized for etch resistance, the second pad layer for adhesion, and the third pad layer for electrical conductivity. This composite approach allows the structure to simultaneously achieve structural integrity during processing and reliable electrical connection, resolving the contradiction between productivity and reliability.
2Reliability
If a multi-layer TSV landing pad structure is formed to enhance connection stability, then the reliability is improved, but the manufacturing complexity increases
Solution Approach 1:
The multi-layer TSV landing pad structure is formed by merging multiple pad layers into a single integrated structure that performs multiple functions simultaneously. The first, second, and third pad layers are combined to provide etch resistance, adhesion, and electrical connection in one unified structure. This merging approach improves connection stability while managing manufacturing complexity by treating the multi-layer structure as a single functional unit rather than separate components.
Solution Approach 2:
The TSV landing pad structure is formed preliminarily before the actual TSV etching and filling processes. By pre-forming the multi-layer pad structure with appropriate materials and geometries, the structure is prepared in advance to withstand subsequent etching processes and provide reliable electrical connection. This preliminary action ensures connection stability is established before critical processing steps, reducing the need for complex in-process adjustments.
3Ease of manufacture
If the TSV landing pad structure is simplified to reduce manufacturing steps, then the ease of manufacture is improved, but the electrical connection reliability deteriorates
Solution Approach 1:
The TSV landing pad structure applies local quality by assigning different materials and properties to different regions and layers. The first pad layer may have properties optimized for etch resistance in specific areas, the second pad layer for adhesion where it contacts the substrate, and the third pad layer for electrical conductivity where it connects to the TSV. This local optimization ensures reliable electrical connection while managing manufacturing complexity by applying different qualities only where needed rather than uniformly throughout the entire structure.
Data Source
AI summary
Integrated circuit (IC) devices are provided including: a first multi-layer wiring structure including a plurality of first wiring layers in a first region of a substrate at different levels and spaced apart from one another, and a plurality of first contact plugs between the plurality of first wiring layers and connected to the plurality of first wiring layers; a through-silicon via (TSV) landing pad including a first pad layer in a second region of the substrate at a same level as that of at least one first wiring layer from among the plurality of first wiring layers, and a second pad layer at a same level as that of at least one first contact plug from among the plurality of first contact plugs and contacts the first pad layer; a second multi-layer wiring structure on the TSV landing pad; and a TSV structure that passes through the substrate and is connected to the second multi-layer wiring structure through the TSV landing pad.