TSV Layout Segmentation for Stress-Stable 3D IC Packaging
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Solution Overview
Problem
In three-dimensional (3D) semiconductor packages, through-silicon-via (TSV) structures face challenges in maintaining stability due to thermal stress, which affects the properties of integrated circuit devices, particularly causing changes in electron mobility and electric field intensity, necessitating a solution to manage stress-induced property changes and optimize TSV arrangement for high-density packaging.
Innovation Solution
The implementation of a structured TSV arrangement with varying pitches and keep-off zones in integrated circuit devices, where first TSV structures have a greater pitch and keep-off distance, and second TSV structures are denser with reduced pitch, preventing property changes in adjacent devices and allowing for closer spacing without device interference, thereby enhancing signal transmission capabilities and reducing device form factor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If TSV structures are spaced closely to increase density, then the quantity of TSV structures per unit area increases, but thermal stress causes property changes in adjacent devices
Solution Approach 1:
The patent applies local quality by differentiating TSV regions into first TSV regions with larger pitches (maintaining device stability) and second TSV regions with smaller pitches (increasing density). Individual devices are selectively placed only in first TSV regions, creating local variations in TSV spacing and device distribution to simultaneously achieve high density and operational reliability.
2Area of stationary object
If TSV pitch is reduced to increase integration density, then more TSV structures fit in limited area, but stress-induced property changes in devices increase
Solution Approach 1:
The patent segments the substrate into distinct first TSV regions and second TSV regions with different pitch characteristics. First TSV regions have larger pitches that prevent harmful stress effects on devices, while second TSV regions have smaller pitches that maximize area utilization. This segmentation allows the system to achieve high integration density while protecting devices from stress-induced property changes.
Solution Approach 2:
Different regions of the substrate are assigned different TSV pitch qualities: first TSV regions use larger pitches for device stability, while second TSV regions use smaller pitches for density optimization. This local differentiation of TSV spacing resolves the contradiction between area utilization and stress management.
3Quantity of substance
If individual devices are placed close to TSV structures to maximize space usage, then device density increases, but device properties become unstable due to thermal stress
Solution Approach 1:
The patent creates local quality differences by restricting individual device placement to first TSV regions with larger pitches, while second TSV regions with smaller pitches contain only TSV structures without adjacent devices. This spatial differentiation ensures device stability in first regions while maximizing overall device density through optimized layout.
Solution Approach 2:
The substrate is segmented into first TSV regions where devices can be placed close to TSV structures (larger pitch), and second TSV regions where only TSV structures are placed (smaller pitch). This segmentation enables high device density while maintaining property stability through controlled proximity relationships.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for a higher density of TSV structures within a limited area, enabling small form factor integrated circuit devices with high-speed signal transmission while minimizing stress-induced property changes, thus improving the operational stability and efficiency of 3D semiconductor packages.
Implementation Method 1
through-silicon-via (TSV) structures forming electrical connections in a vertical direction by penetrating a substrate or a die
Implementation Method 2
property changes of the first individual device and an individual device, caused by stress occurring around the first TSV structures in response to a voltage applied to the first TSV structures
Data Source
AI summary
An integrated circuit device includes a semiconductor substrate, first through-silicon-via (TSV) structures penetrating a first region of the semiconductor substrate and spaced apart from each other by a first pitch, a first individual device between the first TSV structures and spaced apart from the first TSV structures by a distance that is greater than a first keep-off distance, and second TSV structures penetrating a second region of the semiconductor substrate and spaced apart from each other by a second pitch that is less than the first pitch. The second region of the semiconductor device does not include an individual device that is homogeneous with the first individual device and between the second TSV structures.