TSV Noise Reduction via LC Circuit Resonance
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Solution Overview
Problem
High frequency signals in Through Silicon Via (TSV) systems generate noise that affects the quality of semiconductor devices, as existing technologies struggle to effectively mitigate this noise in densely packed integrated circuits.
Innovation Solution
A semiconductor structure is developed that includes a substrate with a TSV and an inductor connected to a capacitor forming an LC circuit, where the resonant frequency of the LC circuit matches the frequency of the high-frequency signal, thereby reducing noise by absorbing resonance noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If TSV is used for signal transfer in densely packed IC devices, then interconnection efficiency and capacitance density are improved, but noise is generated toward other electrical circuits affecting device quality
Solution Approach 1:
A ground via is introduced as an intermediary element between the TSV carrying the high-frequency signal and the surrounding electrical circuits. This ground via acts as a shield or barrier that intercepts and redirects electromagnetic noise generated by the TSV, preventing it from coupling into adjacent circuits. The ground via is connected to the substrate ground, providing a low-impedance path for noise current to flow, thereby isolating the signal TSV from other electrical circuits and reducing interference.
Solution Approach 2:
The invention converts the harmful electromagnetic noise generated by the TSV into a beneficial effect by using the same TSV structure as part of a resonant circuit. By adding a capacitor in parallel with the TSV, a resonant circuit is formed that can be tuned to the operating frequency. At resonance, the circuit presents a high impedance to noise signals at that frequency, effectively filtering and suppressing the noise that would otherwise interfere with other circuits, thus turning the noise-generating structure into its own noise suppression mechanism.
2Quantity of substance
If TSV volume is increased to improve interconnection capacity, then more signals can be transferred, but noise generation increases toward other circuits
Solution Approach 1:
When multiple TSVs are used to increase interconnection capacity, ground vias are strategically placed between adjacent signal TSVs to act as intermediaries. These ground vias create electromagnetic shields that isolate each signal TSV from its neighbors, preventing cross-talk and noise coupling between high-capacity interconnections. This allows the system to maintain high interconnection capacity while controlling noise through the mediating ground structures.
Solution Approach 2:
The invention segments the electromagnetic field environment by introducing ground vias that divide the space around TSVs into isolated regions. Each signal TSV is effectively segmented from adjacent circuits and other TSVs by these ground barriers, allowing high interconnection capacity through multiple TSVs while each segment's noise is contained and directed to ground rather than coupling into other segments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The LC circuit effectively reduces noise in semiconductor structures, enhancing the quality of devices by matching the resonant frequency with the high-frequency signal, thereby improving signal integrity and device performance.
Implementation Method 1
the LC circuit has a resonant frequency... a frequency of the first signal is substantially equal to the resonant frequency... absorbing resonance noise
Data Source
AI summary
The present invention provides a semiconductor structure, including a substrate, a first TSV, an inductor and a capacitor. The first TSV is disposed in the substrate and has a first signal. The inductor is disposed in the substrate. The capacitor is electrically connected to the inductor to form an LC circuit to bypass the noise from the first signal. The present invention further provides a method of reducing the signal noise in a semiconductor structure.