Through-Silicon Via Liner Baking for Adhesion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional through-silicon via (TSV) electrode fabrication methods face issues due to water vapor adsorption by the liner, which prevents effective adherence of the barrier and seed layers, leading to copper crack problems.
Innovation Solution
A method involving a baking process to remove excess water vapor from the liner, followed by forming a barrier layer, seed layer, and metal layer, and then planarizing to create a through-silicon via electrode, ensuring proper adhesion and preventing copper crack issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the liner is deposited in the TSV during fabrication, then the TSV structure is formed, but the liner adsorbs water vapor which prevents effective adhesion of barrier and seed layers
Solution Approach 1:
The patent applies a preliminary baking process to the liner at temperatures between 200-400°C for 1-24 hours before depositing the barrier and seed layers. This preliminary action removes water vapor adsorbed on the liner surface during fabrication, creating a clean surface that enables effective adhesion of subsequent layers and prevents copper crack issues.
2Reliability
If the liner adsorbs water vapor during fabrication, then the TSV structure is completed, but copper crack issues occur due to poor adhesion
Solution Approach 1:
The baking process is performed as a preliminary step before copper electrode formation to remove water vapor from the liner. This preliminary treatment ensures proper adhesion of the barrier and seed layers to the liner, which in turn prevents copper crack issues during subsequent electroplating and device operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively addresses the adherence issues by removing water vapor from the liner, enhancing the stability of the deposited layers and preventing copper cracks, thereby improving the fabrication process of TSV electrodes.
Implementation Method 1
performing a baking process on the liner
Data Source
AI summary
A method for fabricating through-silicon via structure is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a through-silicon via in the semiconductor substrate; covering a liner in the through-silicon via; performing a baking process on the liner; forming a barrier layer on the liner; and forming a through-silicon via electrode in the through-silicon via.