TSV Liner Structure to Prevent Top Opening Damage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
During the formation of through-silicon via (TSV) structures, the top liner is often damaged during the removal of the insulating layer, affecting the electrical properties of the TSV structure.
Innovation Solution
A semiconductor structure is designed with a sufficient thickness of liner around the TSV structure, where a first liner is formed between the TSV structure and the dielectric layer, and a second liner is placed on top of the first liner to protect it from damage during the etching process, ensuring the liner remains intact at the top of the opening.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulating layer at the bottom of the opening is removed to expose the conductive area, then the electrical connection is enabled, but the liner at the top of the opening is damaged or removed
Solution Approach 1:
The patent divides the liner into two distinct segments: a first liner formed at the bottom of the opening and a second liner formed at the top of the opening. This segmentation allows the bottom liner to be removed with the insulating layer to expose the conductive area, while the top liner remains intact to maintain electrical properties. The segmentation resolves the contradiction by enabling selective removal of only the necessary liner portion.
Solution Approach 2:
The patent extracts and removes only the insulating layer at the bottom of the opening along with the first liner, while deliberately preserving the second liner at the top of the opening. This selective extraction enables the conductive area to be exposed for electrical connection while maintaining the protective top liner, thus resolving the contradiction between enabling electrical connection and preserving liner integrity.
2Ease of manufacture
If a single liner is formed in the opening, then the manufacturing process is simple, but the liner at the top is damaged during insulating layer removal
Solution Approach 1:
The patent segments the liner formation process into two distinct steps: forming a first liner at the bottom of the opening, then forming a second liner at the top of the opening. This segmentation increases manufacturing complexity slightly but ensures the top liner remains intact during subsequent insulating layer removal, thereby maintaining electrical properties while accepting the added process step.
Solution Approach 2:
The patent performs preliminary action by forming the second liner at the top of the opening before removing the insulating layer at the bottom. This preliminary formation of the top liner ensures it is in place and protected before the damaging removal process occurs, preventing liner damage and maintaining electrical properties despite the additional manufacturing step.
3Manufacturing precision
If the liner thickness is increased to prevent damage, then the liner remains intact, but the opening space for conductive material is reduced
Solution Approach 1:
The patent segments the liner into two portions with different thickness requirements: the first liner at the bottom can be thinner since it is removed anyway, while the second liner at the top has sufficient thickness to prevent damage during insulating layer removal. This segmentation allows adequate liner protection at the top without unnecessarily reducing the conductive material space in the opening.
Solution Approach 2:
The patent applies local quality by providing different liner characteristics at different locations: the top liner (second liner) has sufficient thickness for protection, while the bottom liner (first liner) is formed separately and removed. This localized differentiation ensures liner integrity where needed without compromising the overall opening space for conductive material.
Data Source
AI summary
Provided are a semiconductor structure and a manufacturing method thereof. A first device structure layer is between a first substrate and a second substrate. A second device structure layer is between the second substrate and the first device structure layer. A first dielectric layer is between the first and second device structure layers. A second dielectric layer is on the second substrate. A through-silicon via (TSV) structure is in the second dielectric layer, the second substrate, the second device structure layer and the first dielectric layer. A connection pad is at the surface of the second dielectric layer and connected to the TSV structure. A first liner is between the TSV structure and the second dielectric layer, the second substrate and the second device structure layer. A second liner is between the top of theTSV structure and the second dielectric layer and a part of the second substrate.