TSV Interlayer Insulation Layout for Lower Wiring Capacitance
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Solution Overview
Problem
The increasing demand for compact and multi-functional electronic devices necessitates a method to reduce parasitic capacitance within semiconductor chips, particularly between wirings, to facilitate high integration of semiconductor chips.
Innovation Solution
A semiconductor device is designed with a stacked configuration of semiconductor chips using through silicon vias (TSV) and interlayer insulating films, including a low dielectric constant material to minimize parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If high integration of semiconductor chips is implemented to meet compact electronic device demands, then device functionality and compactness are improved, but parasitic capacitance between wirings increases
Solution Approach 1:
The patent changes the dielectric constant parameter of the insulating layer by introducing a low dielectric constant material (k < 3.5) into the second interlayer insulating film. This parameter change directly reduces parasitic capacitance between wirings while maintaining the high integration structure, resolving the contradiction between integration density and parasitic capacitance.
Solution Approach 2:
The patent uses a composite insulating film structure where the second interlayer insulating film comprises a low dielectric constant material combined with other materials. This composite approach allows optimization of electrical properties (reducing parasitic capacitance) while maintaining mechanical and structural requirements for high integration semiconductor devices.
2Object-generated harmful factors
If low dielectric constant material is introduced to reduce parasitic capacitance, then parasitic capacitance and RC delay are reduced, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming the low dielectric constant material layer before subsequent wiring formation steps. The second interlayer insulating film with low-k material is prepared in advance, providing a ready-to-use low-capacitance environment for subsequent wiring patterns, thus reducing parasitic capacitance without adding complex post-processing steps.
Solution Approach 2:
The patent applies local quality by introducing the low dielectric constant material specifically in the second interlayer insulating film where wiring density and parasitic capacitance are most critical. This localized application of low-k material targets the specific region needing capacitance reduction without requiring low-k materials throughout the entire device structure, thereby limiting manufacturing complexity increase.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces parasitic capacitance and RC delay, enhancing the reliability and performance of semiconductor devices by optimizing the electrical connections and insulation properties.
Implementation Method 1
the second interlayer insulating film includes a low dielectric constant material and is in contact with an upper surface of the first interlayer insulating film
Data Source
AI summary
A semiconductor device includes: a substrate; a first interlayer insulating film on the substrate; a through-via extending through the substrate and the first interlayer insulating film; a second interlayer insulating film on the first interlayer insulating film, wherein the second interlayer insulating film includes a low dielectric constant material and is in contact with an upper surface of the first interlayer insulating film; and a first wiring pattern in the second interlayer insulating film and on the through-via.