TSV Notch Prevention via Insulating Wall and Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices with through electrode structures, such as TSV, face defects due to notch formation during manufacturing, leading to electrical defects and short circuits.
Innovation Solution
A manufacturing method involving anisotropic and isotropic processing to form through holes with side walls outwardly positioned from the inner peripheral surface of an insulating wall, where anisotropic processing is followed by isotropic processing to correct any notches and ensure proper hole formation, with an insulating wall buried in the semiconductor substrate to prevent defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If anisotropic processing is performed to form a through hole, then the side wall can be formed inwardly from the insulating wall, but notches are created during the processing which cause electrical defects
Solution Approach 1:
An insulating wall is formed in advance around the through hole forming region before performing anisotropic processing. This preliminary action provides a protective structure that prevents notches from causing electrical defects, as the insulating wall isolates the through hole side wall from the semiconductor substrate surface.
Solution Approach 2:
The insulating wall acts as an intermediary structure between the through hole and the semiconductor substrate. It mediates the interaction by providing electrical isolation, ensuring that even if notches are formed during anisotropic processing, they cannot cause short circuits or electrical defects.
2Manufacturing precision
If the side wall of the through hole is positioned inwardly from the insulating wall, then the through hole can be formed with proper shape, but the insulating film coverage is insufficient leading to potential short circuits
Solution Approach 1:
The solution moves from a two-dimensional concern (through hole shape in the cross-section) to a three-dimensional structure by forming an insulating wall that extends vertically around the through hole. This additional dimensional approach ensures that the side wall is electrically isolated even when positioned inwardly from the insulating wall.
Solution Approach 2:
The insulating wall is formed in advance to establish proper electrical isolation before through hole formation. This preliminary structure ensures that subsequent processing steps can form the through hole with appropriate shape while maintaining electrical insulation through the pre-formed insulating wall.
3Reliability
If conventional through electrode structure is used, then electrical coupling between chips is achieved, but defects occur due to notch formation during manufacturing
Solution Approach 1:
The insulating wall serves as an intermediary protective structure that enables reliable electrical coupling through the through electrode while preventing manufacturing defects. It mediates between the through hole formation process and the final electrical connection, ensuring both are achieved without defects.
Solution Approach 2:
The insulating wall provides beforehand cushioning or protection against potential electrical defects that could arise from notch formation during manufacturing. This preventive measure ensures that even if processing imperfections occur, they cannot compromise the electrical coupling reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses the occurrence of electrical defects and notches, ensuring reliable electrical coupling between semiconductor chips and preventing short circuits, thus enhancing the reliability of semiconductor devices and imaging units.
Implementation Method 1
performing anisotropic processing and isotropic processing in this order on a semiconductor substrate to form a through hole
Implementation Method 2
performing anisotropic processing and isotropic processing in this order on a semiconductor substrate to form a through hole
Data Source
AI summary
A semiconductor device that includes a through hole forming region, an insulating wall, a semiconductor substrate, a side wall insulating film, and an electric conductor. The insulating wall has an inner peripheral surface surrounding the through hole forming region. The semiconductor substrate has the insulating wall buried in one of surfaces thereof. The semiconductor substrate has a through hole whose side wall is provided outwardly from the inner peripheral surface of the insulating wall. The side wall insulating film covers the side wall of the through hole and the inner peripheral surface of the insulating wall. The electric conductor is provided in the through hole of the semiconductor substrate via the side wall insulating film.