TSV Package Structure for Semiconductor Heat Dissipation
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Solution Overview
Problem
As semiconductor device sizes decrease, the increased density leads to higher heat generation, which can decrease device performance and reliability.
Innovation Solution
A package structure with a through silicon via (TSV) and bonding structure is formed, allowing for improved heat dissipation by transferring heat generated by the device region to the circuit layer through the TSV.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If semiconductor device density is increased to improve processing power, then processing power is improved, but heat generation increases
Solution Approach 1:
The patent introduces through-silicon vias (TSVs) that extend vertically through the substrate, creating a three-dimensional heat dissipation pathway. This dimensional transition from planar to vertical heat transfer enables efficient thermal management in high-density 3D semiconductor packages without compromising processing power.
Solution Approach 2:
The patent employs thermal interface materials and heat dissipation structures as intermediaries between the semiconductor devices and heat sinks. These intermediary components facilitate efficient thermal energy transfer from the high-density device regions to external cooling systems, resolving the heat generation issue while maintaining high processing power.
2Power
If device density is increased to improve processing power, then processing power is improved, but device reliability decreases due to excessive heat
Solution Approach 1:
By implementing vertical through-silicon via structures, the patent creates additional thermal conduction pathways that efficiently remove heat from high-density device regions. This dimensional approach prevents heat accumulation that would otherwise degrade device reliability, enabling sustained high processing power operation.
Solution Approach 2:
The patent converts the harmful heat generated by high-density devices into a manageable thermal flow by directing it through engineered heat dissipation pathways. The heat energy is channeled through TSVs and thermal interface materials to external heat sinks, transforming a reliability-threatening condition into an efficiently managed thermal process.
3Temperature
If through silicon vias are used for heat dissipation, then heat dissipation capability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent divides the heat dissipation function into discrete modular components: through-silicon vias, thermal interface materials, and heat sink structures. This segmentation allows each component to be optimized and manufactured separately using established processes, reducing overall manufacturing complexity while achieving superior heat dissipation capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances heat dissipation capabilities, improving device performance and reliability by effectively managing excessive heat within semiconductor packages.
Implementation Method 1
transferring heat generated by the device region to the circuit layer through the TSV
Data Source
AI summary
A package structure including a semiconductor die, an encapsulant, a redistribution structure, and a through insulating via is provided. The first redistribution structure includes an insulating layer and a circuit layer. The semiconductor die is disposed on the first redistribution structure. The semiconductor die includes a semiconductor base, through semiconductor vias, a dielectric layer, and bonding connectors. Through semiconductor vias penetrate through the semiconductor base. The dielectric layer is disposed on a backside of the semiconductor base. The dielectric layer of the semiconductor die is bonded with the insulating layer of the first redistribution structure. The bonding connectors are embedded in the dielectric layer and connected to the through semiconductor vias. The bonding connectors of the semiconductor die are bonded with bonding pads of the circuit layer. The encapsulant is disposed on the first redistribution structure and encapsulates the semiconductor die.