TSV Semiconductor Package Structure for Dense Multi-Chip Interconnects
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in efficiently integrating multiple semiconductor devices and ensuring reliable electrical connections within a compact and robust package.
Innovation Solution
The proposed semiconductor package employs a carrier with a debond layer and a buffer layer, where integrated circuit components with through silicon vias (TSVs) and conductive pillars are encapsulated in insulating encapsulations. This configuration allows for the electrical connection of multiple semiconductor devices through a redistribution circuit structure, ensuring efficient communication between devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple semiconductor devices are integrated in a compact package, then device density and integration efficiency are improved, but manufacturing complexity and assembly difficulty increase
Solution Approach 1:
The package structure is divided into distinct functional layers including a carrier substrate, multiple device layers, interconnect layers, and encapsulation layers. Each layer performs specific functions and can be manufactured independently before assembly, simplifying the overall manufacturing process while achieving high device density
Solution Approach 2:
The patent transitions from planar 2D device arrangement to three-dimensional stacked architecture. Multiple semiconductor devices are vertically stacked and interconnected through through-silicon vias (TSVs) and conductive pillars, enabling high integration density without increasing package footprint
2Reliability
If through silicon vias and conductive pillars are used for electrical connections, then electrical connectivity and signal transmission efficiency are improved, but manufacturing precision requirements and production difficulty increase
Solution Approach 1:
Through-silicon vias (TSVs) and conductive pillars are formed in the semiconductor substrates before the devices are mounted and stacked. This preliminary formation of interconnect structures allows for precise alignment to be established early in the manufacturing process, reducing the precision requirements for subsequent assembly steps
Solution Approach 2:
The patent introduces intermediate connection structures including conductive pillars, redistribution layers, and underfill materials that mediate between the TSVs and external contacts. These intermediaries provide alignment tolerance and stress relief, reducing the overall precision requirements while maintaining reliable electrical connections
3Reliability
If insulating encapsulations are used to protect semiconductor devices, then device protection and package integrity are improved, but package volume and device density are reduced
Solution Approach 1:
The semiconductor devices are vertically stacked one above another in a nested configuration, with each device enclosed in its own insulating encapsulation. This nested arrangement minimizes the horizontal space required while maintaining individual device protection, reducing overall package volume
Solution Approach 2:
The patent employs thin film insulating encapsulation materials that provide adequate mechanical protection and electrical isolation with minimal thickness. These thin encapsulation layers protect the devices while occupying minimal volume, maintaining high device density
Data Source
AI summary
A semiconductor package including an insulating encapsulation, an integrated circuit component, and conductive elements is provided. The integrated circuit component is encapsulated in the insulating encapsulation, wherein the integrated circuit component has at least one through silicon via protruding from the integrated circuit component. The conductive elements are located on the insulating encapsulation, wherein one of the conductive elements is connected to the at least one through silicon via, and the integrated circuit component is electrically connected to the one of the conductive elements through the at least one through silicon via.