TSV Conductive Pad Assembly Without CMP Planarization
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Solution Overview
Problem
Conventional techniques for disposing contact pads on through-silicon vias (TSVs) in semiconductor devices are time-consuming and costly, and can lead to reliability issues due to material smearing and fracture, as well as topography challenges that complicate stacking and metal-metal bonding.
Innovation Solution
A semiconductor device assembly with a contact pad disposed on a TSV, where a layer of silicon carbon nitride is deposited at the back side and along the sidewalls of the TSV's protruding portion, and a layer of oxide is disposed partially surrounding the TSV, allowing for a conductive pad to be placed at the coupling surface without using chemical-mechanical planarization, thereby reducing topography and enhancing reliability and cost-efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemical-mechanical planarization is used to dispose contact pads on TSVs, then manufacturing precision can be achieved, but the process becomes time-consuming and costly, and causes material smearing and fracture
Solution Approach 1:
The patent extracts and eliminates the chemical-mechanical planarization step from the conventional contact pad disposal process. Instead of using CMP, the invention employs a direct deposition method where conductive material is deposited onto the TSV protruding portion, forming the contact pad without requiring planarization. This removal of the problematic step resolves the contradiction by achieving contact pad formation without the time-consuming and harmful CMP process.
Solution Approach 2:
The patent replaces the mechanical chemical-mechanical planarization system with a deposition-based system. Instead of mechanically removing material through CMP, the invention uses physical vapor deposition or chemical vapor deposition to directly form the conductive contact pad material on the TSV surface. This substitution eliminates the mechanical abrasion that causes material smearing and fracture while maintaining manufacturing precision.
2Ease of manufacture
If chemical-mechanical planarization is used to dispose contact pads on TSVs, then contact pads can be formed, but reliability deteriorates due to material smearing and fracture
Solution Approach 1:
The patent replaces the mechanical chemical-mechanical planarization system with a deposition-based system. Instead of mechanically removing material through CMP, the invention uses physical vapor deposition or chemical vapor deposition to directly form the conductive contact pad material on the TSV surface. This substitution eliminates the mechanical abrasion that causes material smearing and fracture while maintaining manufacturing precision.
Solution Approach 2:
The patent performs preliminary deposition of conductive material onto the TSV protruding portion before any planarization or bonding operations. By forming the contact pad material in advance through controlled deposition, the TSV structure is protected from subsequent mechanical damage. The conductive material layer is deposited to cover the TSV surface, preventing material smearing and fracture during later processing steps.
3Ease of manufacture
If conventional contact pad disposal techniques are used, then contact pads can be formed, but device complexity increases due to topography challenges
Solution Approach 1:
The patent applies local quality by creating a protruding portion of the TSV that extends beyond the substrate surface in the specific region where the contact pad is needed. This localized geometric modification provides a natural platform for contact pad formation without requiring global planarization of the entire substrate surface. The protruding TSV portion creates a localized topography that facilitates subsequent deposition and bonding operations, reducing overall device complexity.
Solution Approach 2:
The patent performs preliminary deposition of conductive material onto the TSV protruding portion before any planarization or bonding operations. By forming the contact pad material in advance through controlled deposition, the TSV structure is protected from subsequent mechanical damage. The conductive material layer is deposited to cover the TSV surface, preventing material smearing and fracture during later processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces costs, and improves the reliability of semiconductor devices by eliminating the risks of material smearing and fracture, while enabling efficient stacking and reliable metal-metal bonding at the TSV.
Implementation Method 1
a layer of silicon carbon nitride is deposited at the back side and along the sidewalls of the TSV's protruding portion
Implementation Method 2
a layer of oxide is disposed partially surrounding the TSV
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a substrate having a front side and a back side opposite the front side. A through via extends entirely through the substrate. The through via includes a protruding portion that extends beyond the back side of the substrate. A layer of silicon carbon nitride is disposed at the back side of the substrate and along sidewalls of the protruding portion of the through via. A layer of oxide is disposed at the back side of the substrate and at least partially surrounding the protruding portion of the through via. A conductive pad is disposed at a coupling surface of the through via and at least partially extending through the layer of oxide. As a result, a reliable and cost-efficient semiconductor device can be assembled.