TSV Charge Diffusion Control via Partial Impurity Region
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Solution Overview
Problem
Semiconductor devices with Through-Silicon Via (TSV) structures face challenges in charge diffusion during the Reactive Ion Etching (RIE) process, which can deteriorate semiconductor characteristics by affecting the semiconductor substrate and adjacent elements.
Innovation Solution
Incorporating a first conduction type impurity region surrounding only a portion of the sidewall of the through-silicon via, which intercepts and removes p-type charges generated during the RIE process, thereby protecting semiconductor elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through-silicon via is formed using RIE process, then electrical connection through the substrate is achieved, but charges are generated and diffuse into the semiconductor substrate causing deterioration of semiconductor characteristics
Solution Approach 1:
An impurity region is introduced as an intermediary structure between the through-silicon via and the semiconductor substrate. This impurity region acts as a mediator that captures and neutralizes charges generated during RIE processing, preventing them from diffusing into the semiconductor substrate and damaging semiconductor characteristics.
Solution Approach 2:
The impurity region is formed in advance before the RIE process that generates charges. By pre-establishing this protective structure, the semiconductor substrate is prepared to resist charge diffusion before the harmful charges are even generated, thereby preventing deterioration of semiconductor characteristics.
2Object-affected harmful factors
If the impurity region surrounds the entire sidewall of the through-silicon via, then charge protection is maximized, but manufacturing complexity and process difficulty increase
Solution Approach 1:
Instead of uniformly surrounding the entire sidewall, the impurity region is strategically positioned only at specific locations where charge diffusion most critically affects semiconductor characteristics. This localized approach maintains effective protection while reducing structural complexity and easing manufacturing requirements.
Solution Approach 2:
The patent applies partial action by forming the impurity region around only a portion of the sidewall rather than the entire circumference. This partial coverage is sufficient to intercept charge diffusion paths while significantly simplifying the formation process and reducing manufacturing complexity compared to complete circumferential coverage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prevents charge diffusion into the semiconductor substrate and elements, enhancing the reliability and performance of semiconductor devices by shielding them from charge-induced deterioration.
Implementation Method 1
a first conduction type first impurity region contacting with the isolation layer and surrounding only a portion of a sidewall of the through-silicon via in the semiconductor substrate in the second region
Data Source
AI summary
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a gate structure formed in the interlayer insulating layer, an isolation layer formed in the semiconductor substrate, a through-silicon via formed to penetrate the semiconductor substrate, the interlayer insulating layer, and the isolation layer, and a first conduction type first impurity region coming in contact with the isolation layer and formed to surround only a portion of a sidewall of the through-silicon via in the semiconductor substrate.