Through Silicon Via Using Photosensitive Insulator
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Solution Overview
Problem
Conventional semiconductor structure manufacturing using through silicon via technology is costly due to the need for expensive CVD equipment and involves damaging the silicon wafer during polishing, which increases manufacturing time and reduces yield.
Innovation Solution
The method involves using a photosensitive material as an insulating layer, eliminating the need for CVD processing and grinding, by forming a ring hole and silicon pillar in a silicon substrate, filling the hole with a conductive material surrounded by the photosensitive material, which simplifies the process and protects the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If CVD technology is used to form the insulating layer, then the insulating layer can be formed to cover the first surface and inner wall, but the manufacturing cost increases due to expensive equipment
Solution Approach 1:
The patent replaces expensive CVD equipment with a spin coating process using photosensitive material that can be applied at low cost. The photosensitive material serves as a temporary insulating layer during manufacturing that is later removed, functioning as a disposable element that eliminates the need for costly equipment investment.
Solution Approach 2:
The patent substitutes the mechanical/chemical CVD deposition process with a photochemical process. Instead of using CVD equipment to deposit insulating material, the invention uses photosensitive material that is spin-coated and then patterned through photolithography, replacing expensive mechanical systems with optical-chemical processes.
2Ease of operation
If the second surface is polished to expose the copper material, then the copper material can be exposed for subsequent processing, but the manufacturing time increases and the silicon wafer is damaged
Solution Approach 1:
The patent performs preliminary patterning of the insulating layer before copper filling, so that the copper material is already positioned correctly in through-holes. This eliminates the need for subsequent polishing to expose copper, as the copper is precisely placed during the filling step itself, saving time and preventing wafer damage.
Solution Approach 2:
The patent introduces photosensitive material as an intermediary that enables precise patterning and copper placement without requiring mechanical polishing. The photosensitive layer acts as a mediator that allows chemical/electrochemical copper deposition in exact locations, replacing the mechanical polishing intermediary step.
3Ease of operation
If the second surface is polished to expose the copper material, then the copper material can be exposed, but the silicon wafer is easily damaged
Solution Approach 1:
The patent replaces the mechanical polishing process with electrochemical copper deposition and photochemical patterning. Instead of mechanically removing material to expose copper, the invention uses electroplating to deposit copper precisely where needed through patterned photosensitive material, eliminating mechanical contact that could damage the silicon wafer.
Solution Approach 2:
The photosensitive material serves as a disposable patterned layer that guides copper deposition and is then removed. This temporary element enables precise copper placement without mechanical polishing, protecting the silicon wafer from damage while achieving the desired copper exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces manufacturing costs and increases product yield by eliminating the need for expensive equipment and protecting the silicon substrate, thereby simplifying the process and enhancing reliability.
Implementation Method 1
a photosensitive material is disposed in the ring hole, wherein the photosensitive material is insulating
Implementation Method 2
a conductive material is disposed in the through hole
Data Source
AI summary
A semiconductor structure, a method for manufacturing a semiconductor structure and a semiconductor package are provided. The method for manufacturing a semiconductor structure includes the following steps. Firstly, a silicon substrate is provided. Next, a part of the silicon substrate is removed to form a ring hole and a silicon pillar surrounded by the silicon pillar. Then, a photosensitive material is disposed in the ring hole, wherein the photosensitive material is insulating. After that, the silicon pillar is removed, such that the ring hole forms a through hole and the photosensitive material covers a lateral wall of the through hole. Lastly, the conductive material is disposed in the through hole, wherein the outer surface of the conductive material is surrounded by the photosensitive material.