TSV Polymer Liner Structure for Dense Via Isolation and Reliability

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Solution Overview

Problem

As semiconductor devices progress to advanced technology nodes, the increasing density of conductive vias leads to electrical interference, reliability issues, and stress concentration, which affect device performance and yield, particularly in multi-stack structures.

Innovation Solution

A semiconductor device design incorporating a polymer liner between the sidewall of through substrate vias (TSVs) and the substrate, formed using a pulsed etching process, to alleviate electrical interference and improve hybrid bonding reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the distance between two adjacent conductive vias is reduced to increase device density, then device density is improved, but electrical interference increases and device performance decreases

Engineering Contradiction:
Improvedevice densityVSAvoidelectrical interference
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

A polymer liner is introduced as an intermediary material between adjacent through substrate vias (TSVs). This polymer liner acts as a mediator that reduces electrical interference between closely spaced vias, enabling higher device density while maintaining electrical performance. The polymer material provides electrical isolation between neighboring conductive structures.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Quantity of substance

If the dimensions of through substrate vias are reduced to increase device density, then device density is improved, but stress concentration increases and reliability issues arise

Engineering Contradiction:
Improvedevice densityVSAvoidvia reliability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The polymer liner is formed beforehand in the TSV structure to provide stress relief and mechanical support. This cushioning layer prevents stress concentration in small-diameter vias, maintaining via reliability even as dimensions are reduced to increase device density.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Reliability

If a polymer liner is formed extending to the top surface of the passivation layer to improve TSV reliability, then via reliability is improved, but hybrid bonding yield decreases

Engineering Contradiction:
Improvevia reliabilityVSAvoidhybrid bonding yield
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The polymer liner is selectively positioned with its top surface below the passivation layer surface, creating different functional zones: the polymer provides reliability enhancement for the TSV while the exposed passivation layer surface maintains compatibility for hybrid bonding. This local differentiation resolves the conflict between via reliability and bonding yield.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The polymer liner reduces electrical interference and stress concentration, enhancing device performance and yield by improving the reliability of TSVs and hybrid bonding.

Implementation Method 1

performing a pulsed etching operation to form a polymer liner in the first recess

Methodology Applied
Scientific EffectPulsed etching:

Data Source

PatentUS12431410B2Semiconductor device with polymer liner and method for fabricating the same
Publication Date: 2025.09.30 NAN YA TECH
  • US12431410B2 patent drawing
  • US12431410B2 patent drawing
  • US12431410B2 patent drawing

AI summary

The present disclosure provides a semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device includes: a first substrate, having a front side and a back side opposite to the front side; a first passivation layer over the front side of the first substrate; a second passivation layer over the back side of the first substrate, wherein the second passivation layer has a top surface facing away from the first substrate; a conductive feature disposed in the first passivation layer; a through substrate via penetrating through the second passivation layer and the first substrate; and a polymer liner between a sidewall of the through substrate via and the first substrate.