TSV Protection Ring Structure for Crack Detection and Stress Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional two-dimensional packaging cannot meet the increasing interconnection density requirements of semiconductor devices, and Through Silicon Via (TSV) technology poses stress and crack issues affecting device performance and reliability due to stress and electric field effects.
Innovation Solution
A semiconductor structure with a protection structure comprising conductive test rings and dielectric layers around the TSV to isolate and shield stress, and a crack testing method using electrical parameters to detect cracks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If TSV technology is used to achieve vertical interconnection and high-density integration, then interconnection density and integration are improved, but stress and crack issues arise affecting device reliability
Solution Approach 1:
A dielectric layer is introduced as an intermediary between the TSV and surrounding structures. This dielectric layer acts as a stress buffer that decouples the mechanical stress generated by the TSV from adjacent components, preventing crack propagation while maintaining the electrical interconnection function. The intermediary layer effectively isolates the harmful stress effects without compromising the high-density interconnection capability.
Solution Approach 2:
The patent employs composite material structures combining different dielectric materials with varying mechanical and electrical properties. By stacking multiple dielectric layers with different stress characteristics, the structure can simultaneously accommodate the TSV's electrical function and manage mechanical stress distribution, thereby improving both interconnection density and device reliability.
2Length of moving object
If TSV technology is implemented for short-distance interconnection, then interconnection length is reduced, but stress concentration and crack formation increase
Solution Approach 1:
The patent applies local quality modification by introducing a dielectric layer specifically around the TSV structure where stress concentration occurs. This localized intervention targets the specific region experiencing harmful stress without affecting the overall short-distance interconnection advantage. The dielectric layer's mechanical properties are optimized locally to buffer stress while maintaining the compact interconnection geometry.
3Device complexity
If conventional packaging is used to maintain simplicity, then device complexity is low, but interconnection density requirements cannot be met
Solution Approach 1:
The patent transitions from conventional two-dimensional packaging to three-dimensional vertical packaging by implementing TSV technology. This dimensional change enables interconnections to extend through the substrate thickness, achieving high interconnection density without proportionally increasing lateral device complexity. The dielectric layer integration is incorporated into this vertical architecture, maintaining relative simplicity while meeting density requirements.
Data Source
AI summary
A semiconductor structure includes: a through silicon via penetrating a base; and a protection structure, including: a conductive first test ring and a conductive second test ring both arranged around the through silicon via and electrically insulated from the through silicon via; a first dielectric layer located between the first test ring and the second test ring and configured to electrically isolate the first test ring from the second test ring; and a first connection layer located in the first dielectric layer and configured to be electrically connected to the first test ring and the second test ring.