TSV Semiconductor Package Reflow Stacking

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Solution Overview

Problem

Conventional 3D semiconductor packaging using through silicon via (TSV) technology faces challenges such as transportation difficulties of thinned bottom dies, warpage of package substrates leading to low yield rates, and inefficiencies in thermal compression bonding processes.

Innovation Solution

A method involving a wafer with contact and backside surfaces, where first dies with conductive vias are mounted and thinned, then cut into combo dies, and stacked on a package substrate using a reflow process without thermal compression bonding, with protective layers and insulating materials to secure and protect interconnections, and external solder balls for encapsulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If thermal compression bonding is used to mount thinned bottom die, then die mounting is achieved, but transportation of thinned bottom die becomes difficult and warpage of package substrate occurs

Engineering Contradiction:
Improvedie mounting processVSAvoidtransportation stability and substrate warpage
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies preliminary action by forming protective layers on the die surfaces before thinning the bottom die. This protective layer is created in advance to prevent damage during subsequent transportation and handling, eliminating the need to handle fragile thinned die separately. The protective layer is formed prior to the thinning process, ensuring the die structure is reinforced before it becomes vulnerable to damage.

Inventive Principle:
Principle #10Preliminary action

2Productivity

If thinned bottom die is mounted directly by thermal compression bonding, then die stacking is achieved, but yield rate decreases due to warpage and mounting failures

Engineering Contradiction:
Improvedie stacking speedVSAvoidalignment accuracy and yield rate
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by modifying the physical state of the bonding interface through the reflow process. Instead of using traditional thermal compression bonding parameters, the invention uses reflow soldering parameters (temperature profile, time) to activate the solder balls, enabling self-alignment and reducing warpage-related failures. This change in process parameters improves both productivity and manufacturing precision.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces the mechanical thermal compression bonding system with a thermal reflow system. Instead of applying mechanical pressure to force alignment and bonding, the invention uses controlled heating to melt the solder balls, which then naturally align and bond the die to the substrate. This substitution eliminates warpage-induced alignment failures while maintaining high productivity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Strength

If conventional thermal compression bonding is used for stacking, then die connection is achieved, but manufacturing efficiency is reduced due to process complexity

Engineering Contradiction:
Improvedie-to-substrate connection strengthVSAvoidmanufacturing efficiency
Core Design Contradiction:
StrengthVSProductivity

Solution Approach 1:

The patent merges multiple process steps into a single reflow process. The protective layer formation, die attachment, and interconnection bonding are all achieved in one reflow operation rather than separate thermal compression bonding steps. This consolidation maintains strong die-to-substrate connections while significantly improving manufacturing efficiency by reducing process complexity and cycle time.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enhances manufacturing efficiency, reduces warpage, and improves yield rates by simplifying the stacking process and using protective layers to secure interconnections, making transportation easier and reducing inefficiencies in the semiconductor packaging process.

Implementation Method 1

mounting a plurality of first die to the contact surface of the wafer... placing the wafer and the plurality of first die in a reflow oven

Methodology Applied
Scientific EffectMelting and solidification: Melting

Implementation Method 2

each of the first die having a plurality of conductive vias formed therein, wherein protruding ends of the conductive vias electrically connect to the pads by the bumps

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS8643167B2Semiconductor package with through silicon vias and method for making the same
Publication Date: 2014.02.04 ADVANCED SEMICON ENG INC
  • US8643167B2 patent drawing
  • US8643167B2 patent drawing
  • US8643167B2 patent drawing

AI summary

The present invention relates to a stacked semiconductor package and a method for making the same. The method includes the steps of mounting a plurality of first dice to a wafer by conducting a reflow process; and thinning the wafer from the backside surface of the wafer, thereby reducing manufacturing time and preventing warpage.