3D IC TSV Repair via Adjacent Group RTSV Sharing
Solution Overview
Problem
Three-dimensional integrated circuits face failures in through-silicon vias (TSVs) due to voids, bump contact failures, and cracks, which cannot be adequately repaired using conventional methods, necessitating a technique to replace or repair failed TSVs.
Innovation Solution
A three-dimensional integrated circuit design that includes redundant through-silicon vias (RTSVs) arranged in groups, allowing for the sharing of RTSVs between adjacent groups to repair failed TSVs beyond a repairable number within a single group, using demultiplexers to determine and redirect signal paths for effective failure repair.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If redundant through-silicon vias (RTSVs) are added to repair failed TSVs, then the repair capability is improved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The patent divides the TSV structure into functional groups where each group contains multiple TSVs and shared RTSVs. This segmentation allows the system to manage complexity by organizing redundant resources in modular units rather than individually for each TSV, improving repair capability while controlling overall device complexity.
Solution Approach 2:
The patent implements RTSVs that can serve multiple functions: they can repair failed TSVs within their own group and also repair failed TSVs in adjacent groups. This multi-functionality reduces the total number of RTSVs needed compared to having dedicated redundancy for each TSV, thereby improving reliability without proportionally increasing device complexity.
2Reliability
If more RTSVs are provided in each group, then more TSV failures can be repaired, but the area and cost of the integrated circuit increase
Solution Approach 1:
The patent merges the repair resources of adjacent groups by allowing RTSVs in one group to repair failed TSVs in neighboring groups. This consolidation of repair capabilities across group boundaries reduces the total number of RTSVs needed in the entire integrated circuit, thereby reducing the overall area and cost while maintaining the ability to repair multiple TSV failures.
Solution Approach 2:
The patent implements dynamic repair resource allocation where RTSVs can be dynamically assigned to repair failures in different groups based on actual failure patterns. This dynamic sharing of repair resources allows the system to adapt to various failure scenarios without requiring static over-provisioning of RTSVs in every group, optimizing the balance between repair capability and area usage.
Data Source
AI summary
Disclosed is a three-dimensional integrated circuit divided into a plurality of groups and capable of repairing failed through-silicon vias (TSVs). In particular, the three-dimensional integrated circuit includes a plurality of through-silicon vias (TSVs) vertically penetrating the three-dimensional integrated circuit and included in each of the groups, and two or more redundant through-silicon vias (RTSVs), wherein, when the number of failed TSVs in one group exceeds a repairable number, the failed TSVs exceeding the repairable number are repaired using at least one RTSV included in another group adjacent to the group.