Through-Silicon Via Formation Using Ring-Like Insulator
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor device manufacturing, existing methods for forming through-silicon vias (TSVs) often result in short circuits between metal films and the semiconductor substrate due to insufficient control over etching processes, leading to reduced yield and efficiency.
Innovation Solution
A method involving the formation of a ring-like insulating film on a semiconductor substrate, followed by sequential lamination of insulating and metal films, with precise etching from the opposite surface using a metal film as a stopper to create an opening that avoids the insulating film, allowing for the embedding of a metal film and formation of a TSV while maintaining substrate integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If etching is performed to form through-silicon vias, then connection between laminated substrates is achieved, but short circuits between metal films and substrate occur due to insufficient etching control
Solution Approach 1:
A ring-like insulating film is formed on the substrate surface before etching. This preliminary structure serves as a protective barrier that prevents the etching process from creating short circuits between the metal film and substrate, while still allowing the etch to proceed and form the through-silicon via. The ring-like structure is strategically positioned to cover critical areas without blocking the via formation path.
Solution Approach 2:
The ring-like insulating film acts as an intermediary protective layer between the metal film and the substrate during etching. This intermediate structure absorbs or redirects the etching action away from critical areas, preventing direct contact between conductive layers that would cause short circuits, while permitting the necessary via formation to occur.
2Reliability
If a ring-like insulating film is formed and etching is performed to avoid it, then short circuits are prevented, but the manufacturing process becomes more complex
Solution Approach 1:
The insulating film is formed as a ring-like segmented structure rather than a complete continuous layer. This segmentation allows the etching process to proceed in specific areas (through the center of the ring) while maintaining protection in other areas (where the ring material remains). The segmented design provides short circuit prevention exactly where needed without unnecessarily complicating the overall manufacturing process.
Data Source
AI summary
According to one embodiment, a method for manufacturing a semiconductor device, includes: forming, on a first surface of a semiconductor substrate containing silicon, a ring-like insulating film having a ring-like shape; laminating a first insulating film, a first silicon film and a first metal film on the first surface and the ring-like insulating film; forming an opening which passes through the semiconductor substrate, the first insulating film and the first silicon film from a second surface of the semiconductor substrate by use of the first metal film as a stopper, as well as passing through the inside of the ring of the ring-like insulating film, to reach the surface of the first metal film; forming a second insulating film so as to cover an inner wall of the opening; and embedding a second metal film into the opening, to form a through electrode.