TSV-Connected Seal Ring Structure for Dicing Crack Protection
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in protecting integrated circuits from damage during the dicing of semiconductor wafers, particularly due to stress and potential cracks, which can lead to defects and reliability issues.
Innovation Solution
The implementation of a semiconductor structure that includes a first and second seal ring structure, along with through semiconductor vias (TSV), which are formed through a series of processes such as etching, seed layer deposition, conductive material filling, and polishing, and are physically connected to aid in stress protection and structural reinforcement during the singulation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If seal ring structures are added to protect integrated circuits during dicing, then stress protection and crack prevention are improved, but device complexity increases
Solution Approach 1:
The protective structure is segmented into multiple functional components: seal rings formed at different locations (first seal ring at a first location, second seal ring at a second location), through-semiconductor vias connecting different layers, and interconnection structures. This segmentation allows each component to perform its specific protective function while maintaining overall structural integrity during dicing operations.
Solution Approach 2:
The patent implements a nested structure where through-semiconductor vias penetrate through the semiconductor substrate and are connected to interconnection structures that are embedded within the substrate. The seal rings are positioned around active regions and integrated with these nested interconnection layers, creating a multi-layer protective system where each layer supports and reinforces the others.
2Strength
If multiple interconnection layers and seal rings are formed, then structural reinforcement is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs preliminary actions in the manufacturing process by forming sacrificial structures and placeholder features before final interconnection layer deposition. These preliminary structures guide the subsequent formation of seal rings and through-vias, ensuring proper alignment without requiring ultra-precise direct alignment steps. The sacrificial structures are removed later, having served their alignment purpose.
Solution Approach 2:
The patent uses intermediary structures such as mandrels and sacrificial materials that facilitate the formation of precisely aligned interconnection layers and seal rings. These intermediary elements act as temporary guides and templates during manufacturing, enabling accurate positioning of critical features without demanding extreme precision from each individual fabrication step.
3Reliability
If through semiconductor vias are formed to connect seal rings, then crack prevention is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent merges multiple functions into the through-semiconductor via structure: it serves as both a mechanical reinforcement element that prevents crack propagation during dicing, and as an electrical interconnection that links different seal ring structures and active regions. This merging reduces the need for separate protective and conductive elements, simplifying the overall device architecture despite the complex formation process.
Data Source
AI summary
A semiconductor structure includes a semiconductor device, a plurality of through semiconductor vias (TSV), a first seal ring, and a second seal ring. The TSVs are in the semiconductor device. Each of the TSVs has a first surface and a second surface opposite to the first surface. The first seal ring is located in proximity to an edge of the semiconductor structure and is physically connected to the first surface of each of the TSVs. The second seal ring is physically connected to the second surface of each of the TSVs.