TSV Conductive Layers Seed Layer Defect Mitigation
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Solution Overview
Problem
Conventional semiconductor devices with silicon through electrodes (TSV) suffer from defects in the seed layer, leading to erosion of the electrode layer and reduced reliability due to pinholes and other defects, which compromise the integrity of the device.
Innovation Solution
A method of producing semiconductor devices involves forming a through hole in a semiconductor substrate with a conductive layer exposed at the bottom, followed by forming a seed layer on the side surfaces and conducting plating processes to create reliable conductive layers, including a whole surface copper plating process to cover non-sputtered portions and prevent corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a seed layer is formed in the through hole using conventional plating methods, then the electrode layer can be formed, but defects such as pinholes are created in the seed layer leading to erosion and reduced reliability
Solution Approach 1:
A barrier layer is formed on the inner surface of the through hole before forming the seed layer. This preliminary action prevents defects in the seed layer from causing erosion of the electrode layer, thereby improving device reliability while maintaining manufacturing feasibility.
Solution Approach 2:
The barrier layer acts as an intermediary between the through hole wall and the seed layer. It prevents the propagation of defects from the seed layer to the electrode layer, solving the problem of erosion caused by pinholes while allowing the plating process to proceed.
2Reliability
If the seed layer is formed to ensure complete coverage, then erosion is prevented, but manufacturing complexity and cost increase
Solution Approach 1:
The barrier layer is formed in advance on the inner surface of the through hole, creating a protective foundation before the seed layer is deposited. This preliminary protective measure ensures electrode layer integrity without requiring overly complex seed layer formation processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability of semiconductor devices by preventing corrosion and ensuring uniform coverage of the conductive layers, thereby improving the durability and performance of the through electrodes.
Implementation Method 1
a seed layer is formed on a side surface of the through hole from the bottom portion of the through hole to the first main surface
Implementation Method 2
an electrode layer, i.e., a silicon through electrode (TSV: Through Silicon Via), is formed in the through hole
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; a first conductive layer covering a part of the first main surface; a through electrode connected to the first conductive layer and having a first conductive plated layer and a second conductive plated layer; and a second conductive layer formed on the second main surface. The first conductive plated layer contacts with the semiconductor substrate through a seed layer. The second conductive plated layer is formed on the first conductive plated layer. The second conductive layer is formed of the seed layer, the first conductive plated layer, and the second conductive plated layer. The first conductive plated layer has a first edge surface. The second conductive plated layer has a second edge surface flush with the first edge surface.