3D Semiconductor Device TSV Segmentation
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in achieving high integration density, reduced power consumption, and improved data input/output speed in three-dimensional (3D) semiconductor devices due to limitations in through-substrate via (TSV) connections and chip stacking architectures.
Innovation Solution
A 3D semiconductor device with a load-decoupled architecture using through-substrate vias (TSVs) that allows for the stacking of semiconductor chips with the same or different circuit designs, where TSV connections are strategically positioned to decouple the load on slave chips from the master chip, optimizing data paths and reducing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If through-substrate via (TSV) connections are used to stack semiconductor chips, then integration density is improved, but data input/output speed deteriorates due to load coupling between chips
Solution Approach 1:
The patent segments the TSV connections into two distinct groups: first TSVs for power supply connections and second TSVs for data input/output connections. This segmentation separates the load paths, preventing the coupling effect that slows down data transmission. By dividing the originally unified TSV structure into functionally independent segments, the patent resolves the contradiction between maintaining high integration density through stacking and achieving fast data I/O speed.
2Quantity of substance
If multiple semiconductor chips are stacked in 3D configuration, then integration density is improved, but power consumption increases due to cumulative load on power supply
Solution Approach 1:
The patent segments power supply connections through dedicated first TSVs that are separate from data I/O TSVs. This segmentation allows independent optimization of power distribution, enabling the system to manage cumulative power loads across stacked chips more efficiently. The separated power supply path reduces unnecessary current flow and minimizes power consumption while maintaining the high integration density achieved through 3D stacking.
Solution Approach 2:
The patent introduces an intermediary structure in the form of separate first TSVs that act as dedicated power supply conduits between stacked chips. These intermediary power TSVs mediate the power distribution function, isolating it from data signal paths and enabling more efficient power management across the 3D stacked architecture, thereby reducing overall power consumption.
3Device complexity
If conventional TSV connections are used for chip stacking, then device complexity is reduced, but data input/output speed deteriorates due to load coupling
Solution Approach 1:
The patent applies segmentation by dividing TSV connections into functionally separate first TSVs (power supply) and second TSVs (data I/O). While this increases structural complexity compared to conventional unified TSV connections, it resolves the load coupling issue that deteriorates data speed. The segmentation creates independent signal paths that eliminate the harmful interaction between power and data loads, achieving high-speed data transmission in the 3D stacked configuration.
Data Source
AI summary
A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.