TSV Structure Segmented Barrier Oxidation Delamination
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Solution Overview
Problem
In three-dimensional (3D) package technology, existing through-silicon via (TSV) structures face challenges in achieving a stable and reliable electrical connection due to issues with conductive barrier layer oxidation and insulating layer densification, leading to potential delamination and electrical characteristic deterioration.
Innovation Solution
A method involving the formation of a semiconductor device with a through-silicon via (TSV) structure, including a conductive barrier layer with a metal component, a metal-containing insulating layer formed by oxidizing the barrier layer, and a via insulating layer, where the conductive barrier layer is oxidized to surround the remaining portion, and the via insulating layer is degassed at temperatures between 300°C and 500°C to prevent delamination and ensure reliable electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the conductive barrier layer is formed adjacent to the conductive structure, then electrical connection is provided, but oxidation of the barrier layer causes delamination and reliability deterioration
Solution Approach 1:
The conductive barrier layer is divided into multiple segments along the via hole depth direction. Each segment is separated by a gap filled with via insulating layer material, preventing continuous oxidation propagation and reducing delamination risk while maintaining electrical connection functionality.
Solution Approach 2:
The via insulating layer is introduced as an intermediary material between the conductive barrier layer segments and the conductive structure. This intermediary prevents direct contact and oxidation between the barrier layer and surrounding materials, eliminating delamination while preserving electrical conductivity.
2Reliability
If the via insulating layer is formed to cover the barrier layer, then delamination is prevented, but manufacturing complexity increases
Solution Approach 1:
The via insulating layer serves multiple functions simultaneously: it fills gaps between barrier layer segments, provides electrical insulation, prevents oxidation, and anchors the barrier layer segments. This multi-functionality reduces the need for additional dedicated layers, simplifying the overall structure despite the segmentation approach.
3Reliability
If the conductive barrier layer surrounds the conductive structure, then electrical characteristics are maintained, but oxidation leads to adhesive force reduction
Solution Approach 1:
The continuous conductive barrier layer is segmented into discrete sections along the via hole. Each segment maintains local electrical characteristics while the gaps between segments prevent oxidation propagation, preserving adhesive force at the interfaces where the barrier layer contacts the conductive structure.
Solution Approach 2:
The via structure employs a composite material system combining conductive barrier layer segments with via insulating layer material. This composite approach allows the barrier layer to provide electrical functionality while the insulating material protects against oxidation and maintains adhesive strength at the boundaries.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method enhances the stability and reliability of TSV structures by preventing delamination and maintaining electrical characteristics, improving the adhesive force between the conductive barrier layer and the conductive plug, and ensuring the integrity of the TSV structure during thermal processes.
Implementation Method 1
degassing the via insulating layer at a temperature range of between approximately 300° C. and approximately 500° C.
Implementation Method 2
heat treating the resulting structure such that an outer portion of the conductive barrier is oxidized
Data Source
AI summary
An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.