TSV Electrode Formation via Segmented Insulating Films
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Solution Overview
Problem
The integration of semiconductor devices using through-silicon vias (TSV) faces challenges in reliably embedding metals and insulating materials due to the high aspect ratio of TSVs, which complicates the formation of consistently reliable TSV electrodes.
Innovation Solution
A method for manufacturing semiconductor devices involves forming a semiconductor substrate with through-holes, using a layered structure of insulating films and metal layers to create TSV electrodes, including a barrier metal layer, seed metal layer, and through-electrodes, while employing specific etching and deposition techniques to ensure reliable embedding of metals and insulating substances within the TSVs, reducing diffusion of materials into the substrate and preventing short-circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If TSV with high aspect ratio is used for stacking semiconductor devices, then high functionality and integration are achieved, but reliable embedding of metal and insulating material becomes difficult
Solution Approach 1:
The TSV structure is segmented into multiple functional layers: a first insulating film at the bottom, a second insulating film on the inner side surface, and metal layers positioned between them. This segmentation allows each layer to perform its specific function independently, solving the embedding reliability issue in high aspect ratio TSVs by creating distinct zones for electrical isolation and conductivity
Solution Approach 2:
The first and second insulating films act as intermediary layers between the substrate and the metal through-electrode. These intermediary layers prevent direct contact between metal and substrate, reducing material diffusion and enabling reliable metal embedding in the high aspect ratio TSV structure
2Productivity
If high aspect ratio TSV is formed, then device stacking is enabled, but material diffusion into substrate increases causing short-circuits
Solution Approach 1:
The first insulating film positioned at the bottom of the TSV and the second insulating film on the inner side surface act as intermediary barriers that prevent metal atoms from diffusing into the substrate. This intermediary layering solves the material diffusion problem while maintaining the high aspect ratio TSV structure needed for device stacking
Solution Approach 2:
The TSV structure uses composite materials combining insulating films (such as silicon oxide or silicon nitride) and metal layers (such as copper or aluminum). This composite structure provides both the electrical isolation needed to prevent diffusion and the conductivity needed for signal transmission, enabling reliable stacked device integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the reliable formation of TSV electrodes by reducing material diffusion and preventing short-circuits, ensuring consistent and reliable embedding of metals and insulating substances within the TSVs, thereby enhancing the integration and functionality of semiconductor devices.
Implementation Method 1
a barrier metal layer, positioned on the inner side surface of the through-hole of the semiconductor substrate
Implementation Method 2
a seed metal layer positioned on the barrier metal layer; a through-electrode that passes through the insulating layer
Data Source
AI summary
A semiconductor device includes a semiconductor substrate provided with a through-hole, a device layer including a lower layer wiring, an insulating layer that covers the device layer, a first through-electrode that passes through the insulating layer, a first insulating film provided with an opening having a diameter that is substantially the same as or greater than an opening diameter of the through-hole of the semiconductor substrate, a second insulating film positioned on an upper side of the first insulating film and on an inner side surface of the through-hole of the semiconductor substrate, and a second through-electrode electrically connected to the lower layer wiring in the device layer from an upper side of the second insulating film through the inside of the through-hole of the semiconductor substrate.