TSV Shield Ring Prevents Metal Contamination
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration of Through Silicon Via (TSV) technology in semiconductor devices faces issues with metal contamination and electromagnetic interference due to direct exposure of metal pads during the etching process, which can damage adjacent components and cause noise.
Innovation Solution
A semiconductor device design incorporating a contact ring and a liner surrounding the TSV, where the liner is only disposed in the substrate and the contact ring is formed in the interlayer dielectric to protect against metal contamination and electromagnetic interference, using materials like copper, aluminum, or titanium nitride.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a TSV is formed by etching or laser process directly through the substrate, then the interconnection route between chips is shorter and manufacturing efficiency is improved, but metal pads are directly exposed causing metal contamination and electromagnetic interference to adjacent components
Solution Approach 1:
The patent introduces a contact ring as an intermediary structure between the TSV and adjacent metal pads. This contact ring, formed of conductive material, acts as a mediator that provides an alternative current path and prevents direct exposure of metal pads during etching, thereby eliminating metal contamination and reducing electromagnetic interference while maintaining the short interconnection route advantage of TSV technology
Solution Approach 2:
The contact ring is formed in advance before the TSV etching process. This preliminary structure serves as a protective barrier that prevents metal contamination and electromagnetic interference from the outset, rather than addressing these issues after they occur. The contact ring is positioned to surround the TSV opening, creating a protective zone before the harmful effects can manifest
Data Source
AI summary
A semiconductor device includes a substrate; an inter layer dielectric disposed on the substrate; a TSV penetrating the substrate and the ILD. In addition, a plurality of shallow trench isolations (STI) is disposed in the substrate, and a shield ring is disposed in the ILD surrounding the TSV on the STI. During the process of forming the TSV, the contact ring can protect adjacent components from metal contamination.